The behavior of excess electron-holes gas in crossed electric and magnetic fields in multilayers structures p-HgCdTe with graded-gap near-border layers is described. In near-border layers a cadmium mole fraction x Cd ...
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The behavior of excess electron-holes gas in crossed electric and magnetic fields in multilayers structures p-HgCdTe with graded-gap near-border layers is described. In near-border layers a cadmium mole fraction x Cd is increased from central party of structures to its borders. It was obtained, that the multilayers structure can be reduced to homogeneous film by using of effective surface recombination velocities and surface generation rate.
Here we present results of the investigations of current-voltage characteristics, capacity-voltage characteristics and room temperature photoluminescence of ZnO:Er films on silicon, which were obtained by a reactive i...
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Here we present results of the investigations of current-voltage characteristics, capacity-voltage characteristics and room temperature photoluminescence of ZnO:Er films on silicon, which were obtained by a reactive ion-plasma sputtering. It is shown, that the influence of annealing of ZnO:Er films on visual luminescence takes place.
The article is devoted to different types of ultrasonic chemical reactors for laboratory and industrial usage. The presented experimental results confirm a possibility and promising of using the ultrasonic technologie...
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The article is devoted to different types of ultrasonic chemical reactors for laboratory and industrial usage. The presented experimental results confirm a possibility and promising of using the ultrasonic technologies both in industrial plants and laboratory researches.
Since the properties of the polycrystalline 3C-SiC thin film heteroepitaxially grown on Si (n-type, p-type) or SiO 2 /Si is superior to any other that of single crystal SiC, it has attractive potentials for hash envir...
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Since the properties of the polycrystalline 3C-SiC thin film heteroepitaxially grown on Si (n-type, p-type) or SiO 2 /Si is superior to any other that of single crystal SiC, it has attractive potentials for hash environments-, RF-, Bio-M/NEMS. Thus, we have investigated the electronic characteristics of the diodes having that a p-n junction diode was fabricated with 3C-SiC on p-type Si substrate, and Schottky diodes were fabricated with Au deposited on poly 3C-SiC/Si (n-type) and poly 3C-SiC/SiO 2 /Si respectively, for using extreme temperature surroundings M/NEMS with low leakage current. These diodes were annealed at 300, 400, and 500degC, and measured IV characteristics according to different annealing temperatures to investigate their electronic properties. SEM (scanning electron microscopy) and XKD (X-ray diffraction) have investigated the surface morphology of Au deposited on 3C-SiC thin films and the formed phases, respectively.
In this article the model cavitation medium, submitted in single cavitation bubble is considered. The mathematical device connecting acoustic properties of cavitation environments with their initial properties, is sub...
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In this article the model cavitation medium, submitted in single cavitation bubble is considered. The mathematical device connecting acoustic properties of cavitation environments with their initial properties, is submitted by parameters of a primary sound field. On the basis of the developed mathematical device the design procedure of define parameters of ultrasonic generators is offered.
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