Universal method has been proposed for calculation of polyhedra space formation of each cation in the crystal lattice. Generation of simple, chain, layer and frame formations has been predicted and verified for non-ce...
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Universal method has been proposed for calculation of polyhedra space formation of each cation in the crystal lattice. Generation of simple, chain, layer and frame formations has been predicted and verified for non-centrosymmetric oxide crystals widely used in nonlinear optics.
The Presentation will detail the tangible benefits of the integration of MES and Automation The talk explores the key business drivers and components of the Integrated MES solution. Beyond that, it also highlights sol...
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ISBN:
(纸本)0863418761
The Presentation will detail the tangible benefits of the integration of MES and Automation The talk explores the key business drivers and components of the Integrated MES solution. Beyond that, it also highlights solutions to sustain MES with a high level of process and technology integration.
Physical mechanisms of high temperature metastable state formation in proton-exchanged lithium niobate and lithium tantalate layers are discussed. The decay processes of high temperature states to equilibrium states a...
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Physical mechanisms of high temperature metastable state formation in proton-exchanged lithium niobate and lithium tantalate layers are discussed. The decay processes of high temperature states to equilibrium states are traced in experiment for several equilibrium phase intervals.
Raman spectra of poly (polycrystalline) 3C-SiC thin films, which were deposited on the oxidized Si substrate by APCVD, have been measured. They were used to study the mechanical characteristics of poly 3C-SiC grown in...
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Raman spectra of poly (polycrystalline) 3C-SiC thin films, which were deposited on the oxidized Si substrate by APCVD, have been measured. They were used to study the mechanical characteristics of poly 3C-SiC grown in various temperatures. TO and LO modes of 2.0 mum poly 3C-SiC grown at 1180degC occurred at 794.4 and 965.7 cm -1 . Their FWHMs (full width half maximum) were used to investigate the stress and the disorder of 3C-SiC. The broad FWHM can explain that the crystallinity of 3C-SiC grown at 1180degC becomes polycrystalline instead of the disordered crystal. The ratio of intensity I (LO) /I (TO) ap 1.0 means that the crystal defect of 3C-SiC/SiO 2 /Si is small. The biaxial stress of poly 3C-SiC was obtained as 428 MPa. In the interface of 3C-SiC/SiO 2 , the phonon mode of C-O bonding appeared at 1122.6 cm -1 . The phonon modes related to D and G bands of C-C bonding were measured at 1355.8 and 1596.8 cm -1 respectively.
Some wireless channels are well described by the Fritchman's model. In this paper we had investigated influence of shared hopping and interleaving processes on channel parameters described by above model. We have ...
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Some wireless channels are well described by the Fritchman's model. In this paper we had investigated influence of shared hopping and interleaving processes on channel parameters described by above model. We have made simulation, which prove the theoretical results for new simplified Fritchman's model and further apply it to investigation of shared hopping and interleaving processes. As a result we have got maximal decorelation degree conditions.
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