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检索条件"丛书名=Computational Microelectronics"

共 15 条记录，以下是1-10 订阅

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The non-equilibrium Green's Function Method for nanoscale device simulation /

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2014年

作者： Pourfath Mahdi

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Strain-induced effects in advanced MOSFETs /

Strain-induced effects in advanced MOSFETs /

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2011年

作者： Sverdlov Viktor.

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The Monte Carlo Method for Semiconductor Device Simulation 1

The Monte Carlo Method for Semiconductor Device Simulation

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丛书名： computational microelectronics

1989年

作者： Carlo Jacoboni Paolo Lugli

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MOSFET Models for VLSI Circuit Simulation 1

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丛书名： computational microelectronics

1000年

作者： Narain Arora

ISBN: (数字)9783709192474

ISBN: (纸本)9783709192498

Metal Oxide Semiconductor (MOS) transistors are the basic building block ofMOS integrated circuits (I C). Very Large Scale Integrated (VLSI) circuits using MOS technology have emerged as the dominant technology in the semiconductor industry. Over the past decade, the complexity of MOS IC's has increased at an astonishing rate. This is realized mainly through the reduction of MOS transistor dimensions in addition to the improvements in processing. Today VLSI circuits with over 3 million transistors on a chip, with effective or electrical channel lengths of 0. 5 microns, are in volume production. Designing such complex chips is virtually impossible without simulation tools which help to predict circuit behavior before actual circuits are fabricated. However, the utility of simulators as a tool for the design and analysis of circuits depends on the adequacy of the device models used in the simulator. This problem is further aggravated by the technology trend towards smaller and smaller device dimensions which increases the complexity of the models. There is extensive literature available on modeling these short channel devices. However, there is a lot of confusion too. Often it is not clear what model to use and which model parameter values are important and how to determine them. After working over 15 years in the field of semiconductor device modeling, I have felt the need for a book which can fill the gap between the theory and the practice of MOS transistor modeling. This book is an attempt in that direction.

关键词： Software Engineering/Programming and Operating Systems Mathematical and computational Engineering Optical and Electronic Materials Numerical Analysis Electronics and microelectronics, Instrumentation

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Compact Transistor Modelling for Circuit Design 1

引用

丛书名： computational microelectronics

1000年

作者： Henk C. Graaff François M. Klaassen

ISBN: (数字)9783709190432

ISBN: (纸本)9783709190456

During the first decade following the invention of the transistor, progress in semiconductor device technology advanced rapidly due to an effective synergy of technological discoveries and physical understanding. Through physical reasoning, a feeling for the right assumption and the correct interpretation of experimental findings, a small group of pioneers conceived the major analytic design equations, which are currently to be found in numerous textbooks. Naturally with the growth of specific applications, the description of some characteristic properties became more complicated. For instance, in inte grated circuits this was due in part to the use of a wider bias range, the addition of inherent parasitic elements and the occurrence of multi dimensional effects in smaller devices. Since powerful computing aids became available at the same time, complicated situations in complex configurations could be analyzed by useful numerical techniques. Despite the resulting progress in device optimization, the above approach fails to provide a required compact set of device design and process control rules and a compact circuit model for the analysis of large-scale electronic designs. This book therefore takes up the original thread to some extent. Taking into account new physical effects and introducing useful but correct simplifying assumptions, the previous concepts of analytic device models have been extended to describe the characteristics of modern integrated circuit devices. This has been made possible by making extensive use of exact numerical results to gain insight into complicated situations of transistor operation.

关键词： Simulation and Modeling Optical and Electronic Materials Electronics and microelectronics, Instrumentation

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Modelling of Interface Carrier Transport for Device Simulation 1

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丛书名： computational microelectronics

1000年

作者： Dietmar Schroeder

ISBN: (数字)9783709166444

ISBN: (纸本)9783211825396;9783709173688

This book represents a comprehensive text devoted to charge transport at semiconductor interfaces and its consideration in device simulation by interface and boundary conditions. It contains a broad review of the physics, modelling and simulation of electron transport at interfaces in semiconductor devices. Particular emphasis is put on the consistent deriva tion of interface or boundary conditions for semiconductor device simula tion. The book is of interest with respect to a wide range of electronic engineering activities, as process design, device design, process character ization, research in microelectronics, or device simulator development. It is also useful for students and lecturers in courses of electronic engineering, and it supplements the library of technically oriented solid-state physicists. The deepest roots of this book date back to the mid-seventies. Being a student of electrical engineering, who was exposed for the first time to the material of semiconductor device electronics, I was puzzled by noticing that much emphasis was put on a thorough introduction and understand ing of the basic semiconductor equations, while the boundary conditions for these equations received very much less attention. Until today on many occasions one could get the impression that boundary conditions are unimportant accessories; they do not stand on their own besides the bulk transport equations, although it is clear that they are of course a necessary complement of these.

关键词： Electronics and microelectronics, Instrumentation Surfaces and Interfaces, Thin Films Optical and Electronic Materials

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Hierarchical Device Simulation 1

引用

丛书名： computational microelectronics

1000年

作者： Christoph Jungemann Bernd Meinerzhagen

ISBN: (数字)9783709160862

ISBN: (纸本)9783211013618;9783709172261

This book summarizes the research of more than a decade. Its early motivation dates back to the eighties and to the memorable talks Dr. C. Moglestue (FHG Freiburg) gave on his Monte-Carlo solutions of the Boltzmann transport equation at the NASECODE conferences in Ireland. At that time numerical semiconductor device modeling basically implied the application of the drift-diffusion model. On the one hand, those talks clearly showed the potential of the Monte-Carlo model for an accurate description of many important transport issues that cannot adequately be addressed by the drift-diffusion approximation. On the other hand, they also clearly demonstrated that at that time only very few experts were able to extract useful results from a Monte-Carlo simulator. With this background, Monte-Carlo research activities were started in 1986 at the University of Aachen (RWTH Aachen), Germany. Different to many other Monte-Carlo research groups, the Monte-Carlo research in Aachen took place in an environment of active drift-diffusion and hydrodynamic model development.

关键词： Electronics and microelectronics, Instrumentation Science, Humanities and Social Sciences, multidisciplinary Engineering, general Optical and Electronic Materials Numerical and computational Physics, Simulation Statistics for Engineering, Physics, Computer Science, Chemistry and Earth Sciences

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Analysis and Simulation of Heterostructure Devices 1

引用

丛书名： computational microelectronics

1000年

作者： Vassil Palankovski Rüdiger Quay

ISBN: (数字)9783709105603

ISBN: (纸本)9783211405376;9783709171936

Communication and information systems are subject to rapid and highly so phisticated changes. Currently semiconductor heterostructure devices, such as Heterojunction Bipolar Transistors (HBTs) and High Electron Mobility Transis tors (HEMTs), are among the fastest and most advanced high-frequency devices. They satisfy the requirements for low power consumption, medium integration, low cost in large quantities, and high-speed operation capabilities in circuits. In the very high-frequency range, cut-off frequencies up to 500 GHz [557] have been reported on the device level. HEMTs and HBTs are very suitable for high efficiency power amplifiers at 900 MHz as well as for data rates higher than 100 Gbitfs for long-range communication and thus cover a broad range of appli cations. To cope with explosive development costs and the competition of today's semicon ductor industry, Technology Computer-Aided Design (TCAD) methodologies are used extensively in development and production. As of 2003, III-V semiconductor HEMT and HBT micrometer and millimeter-wave integrated circuits (MICs and MMICs) are available on six-inch GaAs wafers. SiGe HBT circuits, as part of the CMOS technology on eight-inch wafers, are in volume production. Simulation tools for technology, devices, and circuits reduce expensive technological efforts. This book focuses on the application of simulation software to heterostructure devices with respect to industrial applications. In particular, a detailed discussion of physical modeling for a great variety of materials is presented.

关键词： Electronics and microelectronics, Instrumentation Optical and Electronic Materials Surfaces and Interfaces, Thin Films Microwaves, RF and Optical Engineering Simulation and Modeling

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The Stationary Semiconductor Device Equations 1

引用

丛书名： computational microelectronics

1000年

作者： Peter A. Markowich

ISBN: (数字)9783709136782

ISBN: (纸本)9783211818923;9783211999370

In the last two decades semiconductor device simulation has become a research area, which thrives on a cooperation of physicists, electrical engineers and mathe maticians. In this book the static semiconductor device problem is presented and analysed from an applied mathematician's point of view. I shall derive the device equations - as obtained for the first time by Van Roosbroeck in 1950 - from physical principles, present a mathematical analysis, discuss their numerical solu tion by discretisation techniques and report on selected device simulation runs. To me personally the most fascinating aspect of mathematical device analysis is that an interplay of abstract mathematics, perturbation theory, numerical analysis and device physics is prompting the design and development of new technology. I very much hope to convey to the reader the importance of applied mathematics for technological progress. Each chapter of this book is designed to be as selfcontained as possible, however, the mathematical analysis of the device problem requires tools which cannot be presented completely here. Those readers who are not interested in the mathemati cal methodology and rigor can extract the desired information by simply ignoring details and proofs of theorems. Also, at the beginning of each chapter I refer to textbooks which introduce the interested reader to the required mathematical concepts.

关键词： Optical and Electronic Materials Power Electronics, Electrical Machines and Networks Electronics and microelectronics, Instrumentation

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The Drift Diffusion Equation and Its Applications in MOSFET Modeling 1

引用

丛书名： computational microelectronics

1000年

作者： Wilfried Hänsch

ISBN: (数字)9783709190951

ISBN: (纸本)9783709190975

To be perfect does not mean that there is nothing to add, but rather there is nothing to take away Antoine de Saint-Exupery The drift-diffusion approximation has served for more than two decades as the cornerstone for the numerical simulation of semiconductor devices. However, the tremendous speed in the development of the semiconductor industry demands numerical simulation tools that are efficient and provide reliable results. This makes the development of a simulation tool an interdisciplinary task in which physics, numerical algorithms, and device technology merge. For the sake of an efficient code there are trade-offs between the different influencing factors. The numerical performance of a program that is highly flexible in device types and the geometries it covers certainly cannot compare with a program that is optimized for one type of device only. Very often the device is sufficiently described by a two dimensional geometry. This is the case in a MOSFET, for example, if the gate length is small compared with the gate width. In these cases the geometry reduces to the specification of a two-dimensional device. Here again the simplest geometries, which are planar or at least rectangular surfaces, will give the most efficient numerical codes. The device engineer has to decide whether this reduced description of the real device is still suitable for his purposes.

关键词： Optical and Electronic Materials Electronics and microelectronics, Instrumentation

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