Basically all properties of semiconductor devices are influenced by the distribution of point defects in their active areas. This book contains the first comprehensive review of the properties of intrinsic point defec...
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ISBN:
(数字)9783709105979
ISBN:
(纸本)9783211206874;9783709172049
Basically all properties of semiconductor devices are influenced by the distribution of point defects in their active areas. This book contains the first comprehensive review of the properties of intrinsic point defects, acceptor and donor impurities, isovalent atoms, chalcogens, and halogens in silicon, as well as of their complexes. Special emphasis is placed on compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behavior from experimental and theoretical investigations. In addition, the book discusses the fundamental concepts of silicon and its defects, the electron system, diffusion, thermodynamics, and reaction kinetics which form the scientific basis needed for a thorough understanding of the text. Therefore, the book is able to provide an introduction to newcomers in this field up to a comprehensive reference for experts in process technology, solid-state physics, and simulation of semiconductor processes.
It was about 1985 when both of the authors started their work using multigrid methods for process simulation problems. This happened in dependent from each other, with a completely different background and diffe...
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ISBN:
(数字)9783709192535
ISBN:
(纸本)9783709192559
It was about 1985 when both of the authors started their work using multigrid methods for process simulation problems. This happened in dependent from each other, with a completely different background and different intentions in mind. At this time, some important monographs appeared or have been in preparation. There are the three "classical" ones, from our point of view: the so-called "1984 Guide" [12J by Brandt, the "Multi-Grid Methods and Applications" [49J by Hackbusch and the so-called "Fundamentals" [132J by Stiiben and Trottenberg. Stiiben and Trottenberg in [132J state a "delayed acceptance, resent ments" with respect to multigrid algorithms. They complain: "Nevertheless, even today's situation is still unsatisfactory in several respects. If this is true for the development of standard methods, it applies all the more to the area of really difficult, complex applications." In spite of all the above mentioned publications and without ignoring important theoretical and practical improvements of multigrid, this situa tion has not yet changed dramatically. This statement is made under the condition that a numerical principle like multigrid is "accepted", if there exist "professional" programs for research and production purposes. "Professional" in this context stands for "solving complex technical prob lems in an industrial environment by a large community of users". Such a use demands not only for fast solution methods but also requires a high robustness with respect to the physical parameters of the problem.
Single-electronics is a fascinating technology which reveals new physical effects of charge transport. It has many benefits and great figure of merits but also several open challenges waiting for elegant solutions . I...
ISBN:
(纸本)9783211835586;9783709172568
Single-electronics is a fascinating technology which reveals new physical effects of charge transport. It has many benefits and great figure of merits but also several open challenges waiting for elegant solutions . In my almost o- decade-long involvement in single-electronics I have seen a steady rise in interest measurable in the number of published articles, conference talks, and research grants from government and industry . In order to collect , categorize, and summarize a good part of this body of knowledge as well as to introduce some new points of view, variations , and extensions, I set out to write this book. A book targeted at the student eager to delve into single-electronics as well as the expert who needs a reference for theory, circuits, and algorithms for system analyses. This book addresses three areas : the theory which goes beyond the orthodox theory, the computational methods necessary to analyze sing- electron circuits, and applications and manufacturing methods, the practical side of single-electronics. The theory was kept short and concise, suitable for people seeking a compact introduction or reference . For in-depth coverage one has to consult cited articles and books. The computational part is very complete and can be considered state of the art for single-electronics . Almost all algorithms which are necessary for a successful and efficient implemen- tion are stated . Not all of them are exhaustively explained but at least a recipe for their successful implementation is given .
Computer-aided-design (CAD) of semiconductor microtransducers is relatively new in contrast to their counterparts in the integrated circuit world. Integrated silicon microtransducers are realized using microfabricatio...
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ISBN:
(数字)9783709164280
ISBN:
(纸本)9783709173213
Computer-aided-design (CAD) of semiconductor microtransducers is relatively new in contrast to their counterparts in the integrated circuit world. Integrated silicon microtransducers are realized using microfabrication techniques similar to those for standard integrated circuits (ICs). Unlike IC devices, however, microtransducers must interact with their environment, so their numerical simulation is considerably more complex. While the design of ICs aims at suppressing "parasitic” effects, microtransducers thrive on optimizing the one or the other such effect. The challenging quest for physical models and simulation tools enabling microtransducer CAD is the topic of this book. The book is intended as a text for graduate students in Electrical Engineering and Physics and as a reference for CAD engineers in the microsystems industry.
Device simulation has two main purposes: to understand and depict the physical processes in the interior of a device, and to make reliable predictions of the behavior of an anticipated new device generation. Towards t...
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ISBN:
(数字)9783709164945
ISBN:
(纸本)9783211830529;9783709173343
Device simulation has two main purposes: to understand and depict the physical processes in the interior of a device, and to make reliable predictions of the behavior of an anticipated new device generation. Towards these goals the quality of the physical models is decisive. The introductory chapter of this book contains a critical review on models for silicon device simulators, which rely on moments of the Boltzmann equation. With reference to fundamental experimental and theoretical work an extensive collection of widely used models is discussed in terms of physical accuracy and application results. This review shows that the quality and efficiency of the phys ical models, which have been developed for the purpose of numerical simulation over the last three decades, is sufficient for many applications. Nevertheless, the basic understanding of the microscopic processes, as well as the uniqueness and accuracy of the models are still unsatisfactory. Hence, the following chapters of the book deal with the derivation of physics-based models from a microscopic level, also using new approaches of "taylored quantum-mechanics". Each model is compared with experimental data and applied to a number of simulation exam ples. The problems when starting from "first principles" and making the models suitable for a device simulator will also be demonstrated. We will show that demands for rapid computation and numerical robustness require a compromise between physical soundness and analytical simplicity, and that the attainable accuracy is limited by the complexity of the problems.
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