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检索条件"丛书名=Tutorial"
546 条 记 录,以下是151-160 订阅
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Temperature Stable Conductivity in Electron Irradiated and Annealed FZ Silicon
Temperature Stable Conductivity in Electron Irradiated and A...
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Annual Siberian Russian Workshop on Electron Devices and Materials (EDM)
作者: Boris I. Mikhaylov Gennady N. Kamaev Mikhail D. Efremov Novosibirsk State Technical University Russia Institute of Semiconductors Physics Russian Academy of Science Russia
In present work constituted results observed of temperature stable conductivity by anneals in range 200~300degC of FZ silicon with point radiation defects. The computations and analysis on influence type and concentra... 详细信息
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Research of Substrate Carrier Injection Mechanism in Digital Integrated Elements
Research of Substrate Carrier Injection Mechanism in Digital...
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Annual Siberian Russian Workshop on Electron Devices and Materials (EDM)
作者: Tatyana Y. Krupkina Denis V. Rodionov Moscow State Institute of Electronic Engineering Moscow Russia
In this paper substrate carrier injection mechanism and related effects were explored for single device and simple digital element.
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[Breaker page]
[Breaker page]
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Annual Siberian Russian Workshop on Electron Devices and Materials (EDM)
Breaker page.
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Application of Field Plate to Increase Breakdown Voltage of DMOS
Application of Field Plate to Increase Breakdown Voltage of ...
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Annual Siberian Russian Workshop on Electron Devices and Materials (EDM)
作者: Alexey S. Kluchnikov Anton Y. Krasukov Moscow State Institute of Electronic Engineering Russia
This paper presents a numerical simulation of the breakdown of DMOS transistors with the field plate. Sentaurus TCAD was used to simulate the breakdown.
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Analysis of Electron Structure of Virgin and Ti-doped Lithium Niobate Crystals
Analysis of Electron Structure of Virgin and Ti-doped Lithiu...
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Annual Siberian Russian Workshop on Electron Devices and Materials (EDM)
作者: Ivan E. Kalabin Victor V. Atuchin Laboratory of Optical Materials and Structures SB RAS Institute of Semiconductor Physics Novosibirsk Russia
In this research the influence of titanium incorporation into lithium niobate substrate was studied using core level X-ray photoelectron spectroscopy.
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Linear Electro-Optic Effect in Vertical-Cavity Surface Emitting Lasers Based on Gaas Quantum Well
Linear Electro-Optic Effect in Vertical-Cavity Surface Emitt...
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Annual Siberian Russian Workshop on Electron Devices and Materials (EDM)
作者: Ilya A. Derebezov Institute of Semiconductor Physics Novosibirsk Russia
The super-fine doublet and triplet structure of VCSEL's modes has been discovered using a high resolution (~10 pm) spectrometer. Typical peaks separation in doublet and triplet structures is about 0.025 nm. Presen... 详细信息
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Automated Synthesis of Broadband Matching and Matching-Correcting Networks
Automated Synthesis of Broadband Matching and Matching-Corre...
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Annual Siberian Russian Workshop on Electron Devices and Materials (EDM)
作者: Alexander S. Volokhin Gennady N. Deviatkov Novosibirsk State Technical University Novosibirsk Russia
In this paper a method for automatic broadband matching and matching-correcting networks synthesis is described; the method allows to design matching networks in a lumped and distributed elemental bases and matching-c... 详细信息
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High Power Ultrasonic Oscillatory Systems
High Power Ultrasonic Oscillatory Systems
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Annual Siberian Russian Workshop on Electron Devices and Materials (EDM)
作者: Vladimir N. Khmelev S.V. Levin Sergey N. Tsyganok Andrey N. Lebedev I.I. Polzunov Altai State Technical University Biysk Russia
In paper the reasons limiting raise of productivity ultrasonic processes by increase of energy supplied into liquid technological medium of acoustic vibrations in a regime of developed cavitation are analysed. It is s... 详细信息
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Non-Volatile Phase Change Memory and Its Fabrication Technology
Non-Volatile Phase Change Memory and Its Fabrication Technol...
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Annual Siberian Russian Workshop on Electron Devices and Materials (EDM)
作者: Alexander G. Balashov Nikita N. Balan Alexander V. Kalinin Moscow State Institute of Electronic Engineering Moscow Russia Bazovye Tekhnologii JSC Moscow Russia
This paper describes the non-volatile phase change memory structure without access transistor in the memory array. The method of the device fabricating on the standard CMOS wafer (e.g., 65 nm) is proposed. The method ... 详细信息
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Ultrasonic Device for Foam Destruction
Ultrasonic Device for Foam Destruction
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Annual Siberian Russian Workshop on Electron Devices and Materials (EDM)
作者: Vladimir N. Khmelev Roman V. Barsukov Dmitry V. Genne Maxim V. Khmelev Biysk Technological Institute (branch) Altai State Technical University Biysk Russia
In article the brief review of ways of destruction of foam, as bad factor of some technological processes is submitted. To consideration the ultrasonic device with the disk radiator, specially developed for research o... 详细信息
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