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Research of an Opportunity of Use Thermistors Firms Honeywell in Multipurpose Devices for Reflexotherapy and Electroacupuncture Diagnostics

Research of an Opportunity of Use Thermistors Firms Honeywel...

引用

Annual Siberian Russian Workshop on Electron Devices and Materials (EDM)

作者： Anton N. Kuzmin Ivan M. Panfiljonok Novosibirsk State Technical University Novosibirsk Russia

Opportunities of use thermoresistants in multipurpose devices for reflexotherapy and diagnostics are investigated. By authors it is developed BPP with use thermoresistants 701-102BAB-B00 firms Honeywell, supposing an arrangement of the several units providing certain kinds of physiotherapeutic influence for multipurpose reflexotherapy of the device, or several gauges for the diagnostic device. Researches of the developed block have shown applicability of this decision and conformity to shown requirements.

关键词： Thermistors Temperature measurement Temperature dependence Thermoresistivity Temperature distribution Energy measurement Thermal resistance Thermoelectricity Spectroscopy Electrical resistance measurement

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Measurement of Electric Characteristics of Lateral Magnetotransistor

Measurement of Electric Characteristics of Lateral Magnetotr...

引用

Annual Siberian Russian Workshop on Electron Devices and Materials (EDM)

作者： Anton V. Koslov Robert D. Tikhonov Moscow State Institute of Electronic Engineering (Technical University) Moscow Russia SMC Technological Center

At absence of a magnetic field measurements of electric characteristics of samples p-n-p lateral dual-collector bipolar magnetosensitivity transistors in diffusion well are lead, which were made on the basis of SMC "technological center". Measurements were spent at inclusion of the transistor under scheme CE (common emitter) at the torn off contact to a substrate and at association of contacts of a substrate and base. Communication between the attitude of a full current of collectors to the general current of base and a substrate with factor of increasing of a base current is shown.

关键词： Electric variables measurement Electric variables Magnetic field measurement Crystals Silicon Sliding mode control Magnetic devices Conductivity Ion implantation P-n junctions

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Imitation and Classification of Seismic Signals for Seismically Signaling System

Imitation and Classification of Seismic Signals for Seismica...

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Annual Siberian Russian Workshop on Electron Devices and Materials (EDM)

作者： Ilya O. Martukhovich Alexander A. Spector Novosibirsk State Technical University Novosibirsk Russia

The algorithm of imitation of seismic signals of the moving man for seismically signaling system has been devised. The algorithm of imitation is based on Markovian signal model. The seismic signals of the different cl... 详细信息

关键词： Communication system signaling Signal processing Signal analysis Background noise Bleaching Signal processing algorithms Low-frequency noise Testing Signal generators White noise

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Influence of Quantum Computers on Classical Cryptography

Influence of Quantum Computers on Classical Cryptography

引用

Annual Siberian Russian Workshop on Electron Devices and Materials (EDM)

作者： Vladislav S. Igumnov Vadim N. Lis Tomsk State University Tomsk Russia

In this work influence of quantum computers on modern classical cryptography is considered. In the end of work it is made a conclusion: whether the quantum cryptography can replace classical cryptography.

关键词： Quantum computing Cryptography Chemicals Quantum mechanics Parallel processing Concurrent computing Laboratories Boolean functions Stability

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The Case Development of a Heat Flux Sensor

The Case Development of a Heat Flux Sensor

引用

Annual Siberian Russian Workshop on Electron Devices and Materials (EDM)

作者： Roman V. Lobach Oleg V. Lobach Regina P. Dikareva Novosibirsk State Technical University Novosibirsk Russia

The thermal phenomena influence course of the majority of physical processes, therefore the control of thermal parameters represents huge practical interest, and rapid development of modern techniques demands from all metrological means, including from thermal measurement devices, more and more high accuracy and reliability. In turn development of such directions as the micromechanics and the micro system technology opens new opportunities before developers of measuring devices. On the basis of semiconductor materials, using the given technologies, it is possible to create the tiny heat flux sensors possessing high sensitivity and the low cost price. On faculty of semiconductor devices and microelectronics the silicon chip of a heat flux sensor has been developed, and also together with the Novosibirsk test set of sensitive elements (chips) has been produced.

关键词： Thermal sensors Rapid thermal processing Sensor phenomena and characterization Process control Semiconductor device measurement Semiconductor materials Costs Semiconductor devices Microelectronics Silicon

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Experimental Semiconductor Nanoelectronics in Institute of Semiconductor Physics SB RAS

Experimental Semiconductor Nanoelectronics in Institute of S...

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Annual Siberian Russian Workshop on Electron Devices and Materials (EDM)

作者： Igor G. Neizvestny Institute of Semiconductor Physics Russian Academy of Science Novosibirsk Russia

This paper deals with the technologies in Institute of Semiconductor Physics SB RAS which are the preparation of initial nanometer size thickness structures (substrates ) by molecular beam epitaxy method (MBE) and silicon on insulator (SOI) method, the methods forming of nanometer size lateral structures by electron beam lithography and atomic force microscopy, and the methods forming three dimensions nanostructures (nanotubes) by self-scrolling highly strained heterolayers.

关键词： Nanoelectronics Physics Silicon on insulator technology Nanostructures Molecular beam epitaxial growth Atomic force microscopy Substrates Electron beams Lithography Atomic beams

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Research of Ultrasonic Drying Process in Dryers of Ventilation Type

Research of Ultrasonic Drying Process in Dryers of Ventilati...

引用

Annual Siberian Russian Workshop on Electron Devices and Materials (EDM)

作者： Vladimir N. Khmelev Igor I. Savin Denis S. Abramenko Sergey N. Tsyganok Roman V. Barsukov Dmitry V. Genne Andrey N. Lebedev Biysk Technological Institute슠(branch) of Altay State Technical University after I.I. Polzunov Biysk Russia

In article are presented results of the researches guided on a increasing of efficiency and decrease of power consumption of dryers of ventilation type by adding in constructive scheme of radiators of ultrasonic oscil... 详细信息

关键词： Ventilation Acoustic waves Acoustic devices Acoustical engineering Energy consumption Piezoelectric transducers Acoustic materials Conferences Helium Moisture

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The Influence of Wave Propagation Channel Properties on Error Probability

The Influence of Wave Propagation Channel Properties on Erro...

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Annual Siberian Russian Workshop on Electron Devices and Materials (EDM)

作者： Alexey G. Vostretsov Alexander S. Pavlov Novosibirsk State Technical University Novosibirsk Russia

The error probability of radio short-range navigation systems (KSNS) in a various propagation environments is considered. Basic and modified structure of the KSNS in various propagation environments is investigated. T... 详细信息

关键词： Error probability AWGN Signal processing Channel capacity Radio navigation Phase modulation Pulse modulation Hardware Chaotic communication Gaussian noise

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Installation for Definition of CCD Linear Sensors Non-uniform Sensitivity

Installation for Definition of CCD Linear Sensors Non-unifor...

引用

Annual Siberian Russian Workshop on Electron Devices and Materials (EDM)

作者： Maxim O. Kulev Sergey A. Terentyev Andrey N. Pavlov Eugeny V. Sypin Eugeny S. Povemov Gennady V. Leonov Biysk Technological Institute Biysk Russia

In the article the laboratory installation for definition of non-uniform sensitivity of cells of the CCD linear sensor and its subsequent updating is considered.

关键词： Charge coupled devices Optical receivers Mechanical sensors Laboratories Optical sensors Light sources Modems Signal processing Size measurement Sensor systems

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Monte Carlo Simulation of SiOx Layers Annealing

Monte Carlo Simulation of SiOx Layers Annealing

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Annual Siberian Russian Workshop on Electron Devices and Materials (EDM)

作者： Nadezhda A. Gladkih Nataliya L. Shwartz Zoya Sh. Yanovitskaja Alexey V. Zverev Novosibirsk State Technical University Novosibirsk Russia Institute of Semiconductor Physics Novosibirsk Russia

Monte Carlo model of SiO x layers annealing and growth was developed. Model layers of stoichiometric SiO 2 with initially randomly distributed components on partially filled diamond-like lattice tends to SiO 4 tetrahedron formation during high-temperature annealing. Chains of tetrahedrons are found to be connected by oxygen atom. Portion of properly coordinated atoms was up to 70%. Presence of excess silicon in SiO x layers results in increasing of the portion of properly coordinated oxygen atoms (up to 95%). Starting from 17% of excess silicon nc-Si were created in annealed layer. MC simulation of initial stages of SiO 2 growth during dry oxidation of atomically clean Si(111) surface was carried out taking into consideration silicon monoxide formation and decomposition.

关键词： Simulated annealing Atomic layer deposition Lattices Oxidation Monte Carlo methods Nanocrystals Computational modeling Silicon compounds Conferences Physics

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