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检索条件"丛书名=Tutorial"
546 条 记 录,以下是31-40 订阅
排序:
An innovative sub-32nm SRAM current sense amplifier in double-gate CMOS insensitive to process variations and transistor mismatch
An innovative sub-32nm SRAM current sense amplifier in doubl...
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IEEE International Conference on Integrated Circuit Design and Technology (ICICDT)
作者: Adam Makosiej Piotr Nasalski Bastien Giraud Andrei Vladimirescu Amara Amara DMCS Technical University of Lodz Lodz Poland Institut Superieur d'Electronique de Paris Paris France Berkeley Wireless Research Center Berkeley USA
This paper introduces a novel current sense amplifier (CSA) in sub-32nm fully depleted (FD) double-gate (DG) silicon-on-insulator (SOI) technology with planar independent self-aligned gates. A new architecture is prop... 详细信息
来源: 评论
New state variable device opportunities for beyond CMOS: A system perspective
New state variable device opportunities for beyond CMOS: A s...
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IEEE International Conference on Integrated Circuit Design and Technology (ICICDT)
作者: Victor V. Zhirnov Ralph K. Cavin George. I. Bourianoff Semiconductor Research Corporation Durham NC USA Intel Corporation Austin TX USA
As semiconductor technology moves closer to the ultimate physical limits for scaling of devices that utilize electrons as information bearing particles, many new opportunities for research in the physical sciences are... 详细信息
来源: 评论
Ultra-high bandwidth memory with 3D-stacked emerging memory cells
Ultra-high bandwidth memory with 3D-stacked emerging memory ...
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IEEE International Conference on Integrated Circuit Design and Technology (ICICDT)
作者: Keiko Abe Mihir P. Tendulkar John R. Jameson Peter B. Griffin Kumiko Nomura Shinobu Fujita Yoshio Nishi Advanced LSI Technology Laboratory Corporate R&D center Toshiba Corporation Kawasaki Japan Center for Integrated Systems University of Stanford CA USA Santa Clara University CA USA
To increase memory bandwidth with minimum area overhead, the new concept of 3D-stacked memory structure consisting of a small sense amplifier shared with a few 3D memory cells has been presented. The 16 bit 3D-stacked... 详细信息
来源: 评论
A 0.5 V area-efficient transformer folded-cascode low-noise amplifier in 90 nm CMOS
A 0.5 V area-efficient transformer folded-cascode low-noise ...
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IEEE International Conference on Integrated Circuit Design and Technology (ICICDT)
作者: Takao Kihara Hae-Ju Park Isao Takobe Fumiaki Yamashita Toshimasa Matsuoka Kenji Taniguchi Graduate School of Engineering Osaka University Osaka Japan
We present a low-voltage transformer folded- cascode CMOS low-noise amplifier (LNA). We reduce the chip area of the LNA by coupling an internal inductor and load inductor, and show the effects of the coupling on the L... 详细信息
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A simple compact model to analyze the impact of ballistic and quasi-ballistic transport on ring oscillator performance
A simple compact model to analyze the impact of ballistic an...
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IEEE International Conference on Integrated Circuit Design and Technology (ICICDT)
作者: S. Martinie G. Le Carval D. Munteanu M.-A. Jaud J.L. Autran UMR CNRS IMNP CNRS Marseilles France CEA-LETI Minatec Grenoble Grenoble France IMNP CNRSUMR CNRS Marseilles France Institut Universitaire Paris France
This paper presents an analytical modeling of ballistic and quasi-ballistic transport, implemented in Verilog-A environment and used for circuit simulation. Our model is based on the Lundstrompsilas approach and uses ... 详细信息
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Reliability of advanced embedded non-volatile memories: The 2T-FNFN device
Reliability of advanced embedded non-volatile memories: The ...
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IEEE International Conference on Integrated Circuit Design and Technology (ICICDT)
作者: Guoqiao Tao NXP Semiconductors Nijmegen Netherlands
The reliability of advanced embedded non-volatile memories has been discussed using the 2T-FNFN devices example. The write/erase endurance and the data retention are the most important reliability parameters. The intr... 详细信息
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3D CMOS integration: Introduction of dynamic coupling and application to compact and robust 4T SRAM
3D CMOS integration: Introduction of dynamic coupling and ap...
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IEEE International Conference on Integrated Circuit Design and Technology (ICICDT)
作者: P. Batude M.-A. Jaud O. Thomas L. Clavelier A. Pouydebasque M. Vinet S. Deleonibus A. Amara CEA LETI MINATEC Grenoble France
This paper presents an innovative structure based on 3 dimensional integration technology, where ultra thin inter layer dielectric enables a dynamic threshold voltage (V TH ) control. A sequential process flow is prop... 详细信息
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A new analytical model for predicting SWCNT band-gap from geometrical properties
A new analytical model for predicting SWCNT band-gap from ge...
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IEEE International Conference on Integrated Circuit Design and Technology (ICICDT)
作者: Karim El Shabrawy Koushik Maharatna Darren M. Bagnall Bashir M. Al-Hashimi School of Electronics and Computer Science Southampton University Southampton UK
In the following paper we present a complete analytical model that predicts the band-gap (E g ) of single-walled carbon nanotubes (SWCNTs) directly from their diameter (d) and chiral angle (thetas). The proposed analy... 详细信息
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On-chip circuit for measuring jitter and skew with picosecond resolution
On-chip circuit for measuring jitter and skew with picosecon...
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IEEE International Conference on Integrated Circuit Design and Technology (ICICDT)
作者: K. A. Jenkins A.P. Jose Z. Xu K.L. Shepard IBM Thomas J. Watson Research Center Yorktown Heights NY USA Department of Electrical Engineering Columbia University New York NY USA
A circuit for on-chip measurement of long-term jitter, period jitter, and clock skew, is demonstrated. The circuit uses a single latch and a voltage-controlled delay element, and is evaluated in a stand-alone pad fram... 详细信息
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Integration of SAW filters
Integration of SAW filters
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IEEE International Conference on Integrated Circuit Design and Technology (ICICDT)
作者: Tarak Hdiji Hassene Mnif Mourad Loulou Electronic and Information Technology Laboratory National Engineering School of Sfax L.E.T.I. Sfax Tunisia
Advances in micromachining technology can facilitate the integration of SAW (Surface Acoustic Wave) devices and CMOS circuitry on IC scale substrate for Monolithic fabrication. The optimal design and performance of th... 详细信息
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