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检索条件"丛书名=Tutorial"
546 条 记 录,以下是41-50 订阅
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Dynamic measurement of critical-path timing
Dynamic measurement of critical-path timing
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IEEE International Conference on Integrated Circuit Design and Technology (ICICDT)
作者: Alan J. Drake Robert M. Senger Harmander Singh Gary D. Carpenter Norman K. James IBM Research Austin TX USA IBM Research Yorktown Heights NY USA Advanced Micro Devices Inc. Austin TX USA IBM Systems Group Austin TX USA
A high bandwidth critical path monitor (1 sample/ cycle at 4-5 GHz) capable of providing real-time timing margin information to a variable voltage/frequency scaling control loop is described. The critical path monitor... 详细信息
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A futur view of SoC in the post 45nm era
A futur view of SoC in the post 45nm era
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IEEE International Conference on Integrated Circuit Design and Technology (ICICDT)
作者: Uming Ko TI USA
While the semiconductor industry has delivered tremendous advancements over the years, the 45nm process node era is still in its infancy with only ≪20% of the market actually utilizing this process node by 2010. There... 详细信息
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Use of the p-floating shielding layer for improving electric field concentration of the recessed gate
Use of the p-floating shielding layer for improving electric...
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IEEE International Conference on Integrated Circuit Design and Technology (ICICDT)
作者: Sang Jun Hwang Seung Woo Yu Jae In Lee Ey-Goo Kang Man Young Sung Department of Electrical Engineering Korea University Seongbuk-Gu South Korea Department of Information Technology Far East University Chungbuk South Korea
The recessed gate IGBT has a lower on-state voltage drop compared with the DMOS IGBT, because it doesn't have a JFET region. But due to the electric field concentration in the corner of the gate edge, the breakdow... 详细信息
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Real-time neutron and alpha soft-error rate testing of CMOS 130nm SRAM: Altitude versus underground measurements
Real-time neutron and alpha soft-error rate testing of CMOS ...
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IEEE International Conference on Integrated Circuit Design and Technology (ICICDT)
作者: J.L. Autran P. Roche S. Sauze G. Gasiot D. Munteanu P. Loaiza M. Zampaolo J. Borel Institute of Materials Microelectronics and Nanosciences of Provence(IM2NPUMR CNRS 6242) University Institute of France Marseilles France STMicroelectronics Private Limited Crolles France Aix-Marseille University and CNRS Institute of Materials Microelectronics and Nanosciences of Provence (IM2NP UMR CNRS 6242) ASTEP Platform c/o Communauté des communes du Dévoluy F-05250 St Etienne en Dévoluy France Laboratoire Souterrain de Modane Modane France JB Research and Development Ferrière Saint Etienne en Devoluy France
This work reports real-time soft-error rate (SER) testing of semiconductor static memories in both altitude and underground environments to separate the component of the SER induced by the cosmic rays (i.e. primarily ... 详细信息
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Table of content
Table of content
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IEEE International Conference on Integrated Circuit Design and Technology (ICICDT)
Presents the table of contents for the proceedings of the 2008 IEEE International Conference on Integrated Circuit Design and Technology and tutorial.
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Design of a current steering CMOS D/A converter with an adaptive control switch and a novel layout technique
Design of a current steering CMOS D/A converter with an adap...
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IEEE International Conference on Integrated Circuit Design and Technology (ICICDT)
作者: Junho Moon Sanghoon Hwang Daeyoon Kim Heewon Kang Seungjin Yeo Doobock Lee Minkyu Song Semiconductor Science Department Dongguk University Seoul South Korea
While the CMOS analog circuits can be designed with the minimum-gate-length of the fabrication process in the alpha-power law MOSFET model, the length of a MOSFET gate has been chosen to be a larger scale than the min... 详细信息
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Design of ST planar integrated inductors based on INFINISCALE flow
Design of ST planar integrated inductors based on INFINISCAL...
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IEEE International Conference on Integrated Circuit Design and Technology (ICICDT)
作者: A. Noire S. Bergeon A. Olliver Y. Courant STMicroelectronics Private Limited France NFINISCALE Grenoble France
IC design is driven by two simultaneous trends: miniaturization of microelectronics technology, and telecommunication market expansion. When considered at a user level, these trends seem to be compatible: by making de... 详细信息
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Read and write circuit assist techniques for improving Vccmin of dense 6T SRAM cell
Read and write circuit assist techniques for improving Vccmi...
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IEEE International Conference on Integrated Circuit Design and Technology (ICICDT)
作者: Muhammad M. Khellah Ali Keshavarzi Dinesh Somasekhar Tanay Karnik Vivek De Circuits Research Lab Intel Corp Hillsboro OR USA
We review circuit techniques aimed at improving read and write stability of the smallest 6T SRAM cell typically used in microprocessorpsilas Last Level cache (LLC). We qualitatively compare three main approaches and g... 详细信息
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SOI chip design and charging damage
SOI chip design and charging damage
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IEEE International Conference on Integrated Circuit Design and Technology (ICICDT)
作者: Terence B. Hook IBM Microelectronics VT USA
In this paper we discuss some aspects of antennas in real designs in SOI technology, and show how the concepts manifest themselves in actual chips, where second-order effects such as resistance and the details of the ... 详细信息
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Ring oscillator circuit structures for measurement of isolated NBTI/PBTI effects
Ring oscillator circuit structures for measurement of isolat...
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IEEE International Conference on Integrated Circuit Design and Technology (ICICDT)
作者: Jae-Joon Kim Rahul Rao Saibal Mukhopadhyay Ching-Te Chuang IBM Thomas J. Watson Research Center Yorktown Heights NY USA Georgia Institute of Technology Atlanta GA USA National Chiao Tung University Hsinchu Taiwan
Simple ring-oscillator circuit has been used to estimate the degradation in circuit performance due to negative bias temperature instability (NBTI) effect but it fails to isolate the degradation from the NBTI for PMOS... 详细信息
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