FERROELECTRIC PROPERTIES OFCaBi4Ti4O15THIN FILMS ON ITO/GLASS SUBSTRATES PREPARED BY SOL-GEL TECHNOLOGY

作     者：CHIEN-MIN CHENG MING-CHANG KUAN KAI-HUNAG CHEN JEN-HWAN TSAI 

作者机构：Department of Electronic Engineering Southern Taiwan University Tainan Taiwan R.O.C. Department of Electronics Engineering and Computer Science Tung-Fang Design University Kaohsiung Taiwan R.O.C. Department of Mathematics and Physics Chinese Air Force Academy Kangshan Kaohsiung Taiwan R.O.C. 

出 版 物：《International Journal of Modern Physics: Conference Series》 

年 卷 期：2012年第ijmpcs卷第6期

页      面：91-97页

学科分类：07[理学] 0702[理学-物理学] 

主　　题：Sol-gel process CBT thin film ferroelectric ITO/glass Leakage current density 

摘      要：In this study, ferroelectric CaBi 4 Ti 4 O 15 (CBT) thin films prepared by sol-gel method and deposited on ITO/glass substrates for applications in system-on-panel (SOP) devices were fabricated and investigated. The electrical and physical characteristics of as-deposited and annealed CBT thin films for metal-ferroelectric-metal (MFM) structures was discussed and investigated. In addition, the ferroelectric properties in annealed CBT thin films on ITO/glass substrate showed and exhibited clear polarization versus electrical field curves. From p - E curves, the 2 P r value and coercive field of annealed CBT thin films were calculated to be 10μC/cm 2 and 180 kV/cm, respectively. Finally, the maximum capacitance, leakage current density, and transmittance within the ultraviolet-visible (UV–vis) spectrum were also investigated and discussed.