Impact of doping on the morphology, structure and optical properties of c-oriented GaN nanorods

作     者：Kumar, Rajendra Chatterjee, Abhijit Shivaprasad, S. M. 

作者机构：Jawaharlal Nehru Ctr Adv Sci Res Chem & Phys Mat Unit Bangalore 560064 Karnataka India Jawaharlal Nehru Ctr Adv Sci Res Int Ctr Mat Sci Bangalore 560064 Karnataka India Jawaharlal Nehru Ctr Adv Sci Res Sch Adv Mat Bangalore 560064 Karnataka India 

出 版 物：《MATERIALS RESEARCH BULLETIN》 (材料研究通报)

年 卷 期：2021年第142卷

页      面：111390-111390页

核心收录：

学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：International Centre for Mathematical Sciences, ICMS Jawaharlal Nehru Centre for Advanced Scientific Research, JNCASR 

主　　题：A Nitrides A Semiconductors B Epitaxial growth B Optical properties C Transmission electron microscopy (TEM) 

摘      要：We report here the influence of Mg and Si-doping during growth, on the morphology, structure, and optical properties of single-crystalline GaN nanorods (NRs) grown on Si substrates using plasma-assisted molecular beam epitaxy. Mg-doping is shown to enhance the lateral growth of the NRs, leading to a higher degree of coalescence. Si-doping during the nucleation stage of the growth enhances the mutual misorientation of the NRs. Strain profile measurements along the length of individual NR by transmission electron microscopy shows that the top regions are relaxed. Evaluation of carrier concentration by Raman spectroscopy reveals that Si-doping leads to an increase of carrier concentration from 1016 to 1017 cm-3, and the optimal Mg incorporation for the realisation of pdoping is confirmed by photoluminescence spectroscopy. These results will significantly help in understanding and tuning the structural and optical properties of GaN NRs through doping in the fabrication of NR based optoelectronic devices.