Integration of fullerenes and carbon nanotubes with aggressively scaled CMOS gate stacks

作     者：Udayan Ganguly Chungho Lee Edwin C. Kan 

作者机构：Department of Materials Science and Engineering Cornell University USA School of Electrical and Computer Engineering Cornell University USA 

出 版 物：《MRS Online Proceedings Library》 

年 卷 期：2021年第789卷第1期

页      面：205-210页

摘      要：Here we report the first study towards the integration of fullerenes and carbon nanotubes (CNT) in the gate stack of CMOS technology, which is a promising hybrid approach of top-down and bottom-up fabrication process. Prospective processes for C60 and CNT deposition over an aggressively scaled 2 nm gate oxide in the MOS capacitor structure have been monitored. CV measurements show minimal silicon contamination and interface states. Step charging at a specific voltage that corresponds to a fixed number density of C60 is used to establish the structural integrity and size-mono-dispersion of C60. The CV method can be further used to probe the charge injection into C60 and its anions to establish fundamental understanding of their molecular orbital (MO) structure.