Characterization of Plzt on Platinum Electrodes for High Density Fram Application

作     者：YongSoo Choi SooDoo Choe SeungHyun Kim ChangEun Kim DooYoung Yang 

作者机构：Department of Ceramic Engineering YonSei University Seoul Korea Advanced Technology R&D Lab. LG Semicon Co. Ltd. Cheongju-si Korea 

出 版 物：《MRS Online Proceedings Library》 

年 卷 期：2011年第446卷第1期

页      面：337-342页

摘      要：A new sol-gel route to obtain PLZT thin film was developed by combining the advantage of 2-methoxyethanol as a solvent and acetylacetone as a chelating agent. The sol maintained the same stable state as that of fresh synthesized sol even after 60 days of aging. The PLZT films spin coated onto a Pt/Ti/SiO2 substrate with 15% Pb excess and 7.5% La added sol showed well developed rosette microstructure of uniform grain sizes(0.3 - 0.5 μm) and gave well behaved ferroelectric properties with the values of Ps, Pr, and Ec of 40 μC/cm2, 15 μ C/cm2, and 20 kV/cm respectively at 5V after 650 °C and above annealing. The degradation in polarization of 2.5% La doped PLZT thin film was found to be less than 20% up to 1012 cycles