Amorphous silicon Bragg reflectors fabricated by oblique angle deposition

作     者：S. J. Jang C. I. Yeo Y. T. Lee 

作者机构：School of Information & Mechatronics Gwangju Institute of Science & Technology Gwangju Korea Graduate Program of Photonic and Applied Physics Gwangju Institute of Science & Technology Gwangju Korea Department of Nanobio Materials & Electronics Gwangju Institute of Science & Technology Gwangju Korea 

出 版 物：《MRS Online Proceedings Library》 

年 卷 期：2011年第1396卷第1期

页      面：222-227页

主　　题：optical properties thin film Si 

摘      要：We demonstrate the highly reflective broadband a-Si distributed Bragg reflector fabricated by oblique angle deposition. By tuning the refractive index of a-Si film, the high index contrast material system was achieved. The broadband reflective characteristics of a-Si distributed Bragg reflector were investigated by calculation and fabrication. The broad stop band (Δλ/λ=33.7%, R99%) with only a five-pair a-Si distributed Bragg reflector was achieved experimentally at center wavelength of 650, 980, and 1550 nm. The size-, feature- and substrate-independent method for highly reflective Bragg reflectors was realized by simple oblique angle evaporation.