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作者机构:School of Information & Mechatronics Gwangju Institute of Science & Technology Gwangju Korea Graduate Program of Photonic and Applied Physics Gwangju Institute of Science & Technology Gwangju Korea Department of Nanobio Materials & Electronics Gwangju Institute of Science & Technology Gwangju Korea
出 版 物:《MRS Online Proceedings Library》
年 卷 期:2011年第1396卷第1期
页 面:222-227页
主 题:optical properties thin film Si
摘 要:We demonstrate the highly reflective broadband a-Si distributed Bragg reflector fabricated by oblique angle deposition. By tuning the refractive index of a-Si film, the high index contrast material system was achieved. The broadband reflective characteristics of a-Si distributed Bragg reflector were investigated by calculation and fabrication. The broad stop band (Δλ/λ=33.7%, R99%) with only a five-pair a-Si distributed Bragg reflector was achieved experimentally at center wavelength of 650, 980, and 1550 nm. The size-, feature- and substrate-independent method for highly reflective Bragg reflectors was realized by simple oblique angle evaporation.