A 1.7-to-2.7GHz 35-38% PAE Multiband CMOS Power Amplifier Employing a Digitally-Assisted Analog Pre-Distorter (DAAPD) Reconfigurable Linearization Technique

作     者：Mariappan, Selvakumar Rajendran, Jagadheswaran Chen, Yong Mak, Pui-In Martins, Rui P. 

作者机构：Univ Sains Malaysia Collaborat Microelect Design Excellence Ctr Engn Campus George Town 11800 Malaysia Univ Macau State Key Lab Analog & Mixed Signal VLSI Macau Peoples R China Univ Macau IME ECE FST Macau Peoples R China 

出 版 物：《IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS》 (IEEE Trans. Circuits Syst. Express Briefs)

年 卷 期：2021年第68卷第11期

页      面：3381-3385页

核心收录：

学科分类：0808[工学-电气工程] 08[工学] 

基　　金：Universiti Sains Malaysia (USM) RUI [1001/PCEDEC/8014079] Fundamental Research Grant Scheme (FRGS) [1001/PCEDEC/6071449] Collaborative Research in Engineering, Science and Technology Centre (CREST) [PCEDEC/6050415] Universidade de Macau (UM) [MYRG2018-00244-AMSV] QED Venture 

主　　题：Power amplifiers Power generation Transconductance Voltage control Tuning Long Term Evolution Transistors Power amplifier (PA) CMOS digitally-assisted analog predistorter (DAAPD) back-off output power (PBO) adjacent channel leakage ratio (ACLR) and error vector magnitude (EVM) power-added efficiency (PAE) long-term evolution (LTE) 

摘      要：This brief presents a CMOS power amplifier (PA) employing a digitally-assisted analog pre-distorter (DAAPD) reconfigurable linearization technique to reduce the back-off output power (PBO) for multiband operation. The proposed DAAPD optimizes the interstage load impedance between the driver and the main stage by changing the transconductance of the driver amplifier and its active load. We also utilize the DAAPD to optimize the PA when subjected to process-voltage-temperature (PVT) variations. Fabricated in 130-nm CMOS, the DAAPD-PA operates from 1.7 to 2.7 GHz with a 3 dB back-off output power efficiency of 35% to 38% while fulfilling the stringent adjacent channel leakage ratio (ACLR) and error vector magnitude (EVM) requirements of a 20-MHz 16-QAM LTE signal. With a continuous wave (CW) signal, the DAAPD-PA achieves a maximum output power of 27 to 28 dBm across frequencies of interest with supply headroom of 3.3 V. Finally, the DAAPD-PA covers 20 LTE bands with reduced back-off output power.