版权所有:内蒙古大学图书馆 技术提供:维普资讯• 智图
内蒙古自治区呼和浩特市赛罕区大学西街235号 邮编: 010021
作者机构:Department of Electrical Engineering College of Engineering Taif University Taif Saudi Arabia Electronics and Electrical Communications Engineering Department Faculty of Electronic Engineering Menoufia University Menouf32951 Egypt Department of Information and Communication Technology Marwadi University Rajkot India Department of Electrical and Electronic Engineering Rajshahi University of Engineering & Technology Kazla Rajshahi6204 Bangladesh Computational Optics Research Group Advanced Institute of Materials Science Ton Duc Thang University Ho Chi Minh City Viet Nam Faculty of Applied Sciences Ton Duc Thang University Ho Chi Minh City Viet Nam
出 版 物:《Journal of Optical Communications》 (J Opt Commun)
年 卷 期:2024年第45卷第s1期
页 面:s359-s368页
核心收录:
学科分类:080701[工学-工程热物理] 080603[工学-有色金属冶金] 070207[理学-光学] 0809[工学-电子科学与技术(可授工学、理学学位)] 07[理学] 0806[工学-冶金工程] 08[工学] 0807[工学-动力工程及工程热物理] 0805[工学-材料科学与工程(可授工学、理学学位)] 0803[工学-光学工程] 0702[理学-物理学]
摘 要:This work presents the gallium arsenide (GaAs) electro-optic absorption (EA) modulators performance evaluation compared to the previous models with SiGe EA modulators under high-temperature variations. The average switching speed is studied and analyzed for both EAs. The consumed energy or power per bit is taken into account for both modulators. The modulation depth and transmission coefficient are studied for both previous and proposed EAs with 250 Gb/s at room temperature. The technical performance parameters are also analyzed such as insertion loss, modulation depth, output power, contrast ratio, transmission coefficient, and power length product for both previous and proposed EAs under high-temperature variations. The study assured that to get the optimum GaAs EAs performance efficiency, the modulator length and the thickness should be values of 50 and 5 mm, respectively at room temperature. © 2021 Walter de Gruyter GmbH, Berlin/Boston.