Research on conducted emi characteristics of sic mosfet considering temperature effect

作     者：Du, Mingxing Bian, Weiguo Wang, Hongbin Dai, Qiqi Ouyang, Ziwei 

作者机构：Tianjin Key Laboratory of Control Theory & Applications in Complicated System Tianjin University of Technology Tianjin300384 China State Key Laboratory of Reliability and Intelligence of Electrical Equipment Hebei University of Technology Tianjin300130 China 

出 版 物：《Progress In Electromagnetics Research C》 (Prog. Electromagn. Res. C)

年 卷 期：2021年第112卷

页      面：69-82页

核心收录：

学科分类：080805[工学-电工理论与新技术] 080904[工学-电磁场与微波技术] 080701[工学-工程热物理] 080603[工学-有色金属冶金] 0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0806[工学-冶金工程] 0817[工学-化学工程与技术] 0807[工学-动力工程及工程热物理] 0804[工学-仪器科学与技术] 0703[理学-化学] 0702[理学-物理学] 

基　　金：This work was supported in part by State Key Laboratory of Reliability and Intelligence of Electrical Equipment (No. EERI2019006)  Hebei University of Technology  and Tianjin Municipal Science and Technology Project (No. 20YDTPJC00510) 

主　　题：Temperature distribution 

摘      要：—The junction temperature change of SiC MOSFET will change its switching process, and then affect the electromagnetic interference (EMI) characteristics of the system where the device is located and the safe operation of the surrounding equipment. Therefore, it is of great significance to research the temperature dependence of its EMI characteristics. In this paper, a buck converter composed of SiC MOSFET is taken as the research object to study the temperature variation characteristics of the conducted EMI spectrum during the switching process. Combined with the specific circuit connection form of the buck converter, the coupling paths of the conducted EMI are determined, and then the influence mechanisms of temperature change on the differential mode (DM) interference and common mode (CM) interference are analyzed. The theoretical analysis and experimental results show that the DM interference of the buck converter composed of SiC MOSFET increases with the increase of temperature, and the CM interference is almost unaffected by temperature. When the working temperature increases from 25◦C to 145◦C, the peak value of DM voltage increases by 6.7 dBµV, and the peak value of CM voltage changes less than 1.4 dBµV. © 2021, Electromagnetics Academy. All rights reserved.