Semiconducting M_(2)X(M=Cu,Ag,Au;X=S,Se,Te)monolayers:A broad range of band gaps and high carrier mobilities

作     者：Lei Gao Yan-Fang Zhang Shixuan Du Lei Gao;Yan-Fang Zhang;Shixuan Du

作者机构：Institute of Physics&University of Chinese Academy of SciencesChinese Academy of SciencesBeijing 100190China Faculty of ScienceKunming University of Science and TechnologyKunming 650000China CAS Key Laboratory of Vacuum PhysicsBeijing 100049China 

出 版 物：《Nano Research》 (纳米研究（英文版）)

年 卷 期：2021年第14卷第8期

页      面：2826-2830页

核心收录：

学科分类：07[理学] 070202[理学-粒子物理与原子核物理] 0702[理学-物理学] 

基　　金：supported by the National Natural Science Foundation of China(No.61888102) the National Key Research and Development Projects of China(No.2016YFA0202300) the Strategic Priority Research Program of the Chinese Academy of Sciences(No.XDB30000000) the Fundamental Research Funds for the Central Universities 

主　　题：two-dimensional semiconductors group-11-chalcogenides electronic properties first-principles calculations 

摘      要：Two-dimensional semiconductors(2DSCs)with appropriate band gaps and high mobilities are highly desired for future-generation electronic and optoelectronic ***,using first-principles calculations,we report a novel class of 2DSCs,group-11-chalcogenide monolayers(M_(2)X,M=Cu,Ag,Au;X=S,Se,Te),featuring with a broad range of energy band gaps and high carrier *** energy band gaps extend from 0.49 to 3.76 eV at a hybrid density functional level,covering from ultraviolet-A,visible light to near-infrared region,which are crucial for broadband ***,the calculated room-temperature carrier mobilities of the M_(2)X monolayers are as high as thousands of cm^(2)·V^(-1)·s^(-1).Particularly,the carrier mobilities ofε-Au_(2)Se and e-Au2Te are up to 104 cm^(2)·V^(-1)·s^(-1),which is very attracitive for electronic *** from the broad range of energy band gaps and superior carrier mobilities,the group-11-chalcogenide M_(2)X monolayers are promising candidates for future-generation nanoelectronics and optoelectronics.