Material Modeling in Semiconductor Process Applications

作     者：Boris A.Voinov Patrick H.Keys Stephen M.Cea Ananth P.Kaushik Mark A.Stettler 

作者机构：Logic Technology DevelopmentIntel CorporationHillsboro ORUSA95124 Nonvolatile Memory Solutions GroupIntel CorporationSanta ClaraCaliforniaUSA95054 Logic Technology DevelopmentIntel CorporationNizhniy NovgorodRussian Federation603024 

出 版 物：《Journal of Microelectronic Manufacturing》 (微电子制造学报（英文）)

年 卷 期：2020年第3卷第4期

页      面：40-50页

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

主　　题：TCAD atomistic modeling density functional theory molecular dynamics kinetic Monte Carlo. 

摘      要：During the past decade,significant progress has been achieved in the application of material modeling to aid technology development in semiconductor manufacturing companies such as *** this paper,we review examples of applications involving a complex set of material modeling tools and methodologies and share our perspective of the future of the *** are given illustrating the landscape of useful physical models and approaches along with commentary addressing tool relevance and simulation efficiency *** the scope of this paper precludes providing in-depth details,references to more focused publications are ***,we outline how to approach constructing a general infrastructure for supporting TCAD material modeling applications.