Effects of Rapid Thermal Processing on Thermal Oxides of Silicon

作     者：S. K. Lee D. K. Shih D. L. Kwong N. S. Alvi N. R. Wu H. S. Lee 

作者机构：Microelectronics Research Center Department of Electrical and Computer Engineering University of Texas at Austin Austin USA Delco Electronics GMC Kokomo USA Gould AMI Semiconductors Santa Clara USA General Motors Research Laboratories Warren USA 

出 版 物：《MRS Online Proceedings Library》 

年 卷 期：1986年第71卷第1期

页      面：449-454页

摘      要：The effects of rapid thermal processing (RTP) on the electrical properties of thin gate oxides in MOS devices have been studied. MOS capacitors have been analyzed by capacitance-voltage (C-V), current-voltage (I-V), and constant current stress techniques. MOSFET degradation due to hot carrier injection has also been investigated. No significant RTP-induced degradation was detected in any category of the device properties considered here. An abnormal trapping behavior was observed on the wafer annealed at 1100°C for 5 seconds.