Heat capacity of nonequilibrium electron-hole plasma in graphene layers and graphene bilayers

作     者：V. Ryzhii M. Ryzhii T. Otsuji V. Mitin M. S. Shur 

作者机构：Research Institute of Electrical Communication Tohoku University Sendai 980-8577 Japan Institute of Ultra High Frequency Semiconductor Electronics of RAS Moscow 117105 Russia Center for Photonics and Two-Dimensional Materials Moscow Institute of Physics and Technology Dolgoprudny 141700 Russia Department of Computer Science and Engineering University of Aizu Aizu-Wakamatsu 965-8580 Japan Department of Electrical Engineering University at Buffalo SUNY Buffalo New York 1460-1920 USA Department of Electrical Computer and Systems Engineering Rensselaer Polytechnic Institute Troy New York 12180 USA 

出 版 物：《Physical Review B》 (Phys. Rev. B)

年 卷 期：2021年第103卷第24期

页      面：245414-245414页

核心收录：

基　　金：ARL MSME Alliance Office of Naval Research, ONR Air Force Office of Scientific Research, AFOSR, (FA9550-19-1-0355) Air Force Office of Scientific Research, AFOSR Army Research Laboratory, ARL Japan Society for the Promotion of Science, KAKEN, (20K20349) Japan Society for the Promotion of Science, KAKEN Research Institute of Electrical Communication, Tohoku University, RIEC, (H31/A01) Research Institute of Electrical Communication, Tohoku University, RIEC 

主　　题：Bilayers Plasmonics Specific heat Graphene 

摘      要：We analyze the statistical characteristics of quasinonequilibrium two-dimensional electron-hole plasmas in graphene layers (GLs) and graphene bilayers (GBLs) and evaluate their heat capacity. The GL heat capacity of the weakly pumped intrinsic or weakly doped GLs normalized by the Boltzmann constant is equal to cGL≃6.58. With varying carrier temperature the intrinsic GBL carrier heat capacity cGBL changes from cGBL≃2.37 at T≲300 K to cGBL≃6.58 at elevated temperatures. These values are markedly different from the heat capacity of classical two-dimensional carriers with c=1. The obtained results can be useful for the optimization of different GL- and GBL-based high-speed devices.