Insights of VG-dependent threshold voltage fluctuations from dual-point random telegraph noise characterization in nanoscale transistors

作     者：Xuepeng ZHAN Jiezhi CHEN Zhigang JI 

作者机构：School of Information Science and EngineeringShandong University State Key Laboratory of High-end Server and Storage Technology National Key Laboratory of Science and Technology on Micro/Nano FabricationShanghai Jiaotong University 

出 版 物：《Science China(Information Sciences)》 (中国科学:信息科学(英文版))

年 卷 期：2022年第65卷第8期

页      面：297-298页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：financially supported by China Key Research and Development Program (Grant Nos. 2016YFA0201802, 2019YFB2205005) National Natural Science Foundation of China (Grant Nos. 91964105, 61874068) Natural Science Foundation of Shandong (Grant Nos. ZR2020JQ28, ZR2020KF016, ZR2019LZH009) Fundamental Research Funds of Shandong University 

摘      要：Dear editor,Random telegraph noise(RTN) has attracted rising attention with the diminishing device size. In each device, the number of dopant atoms and defects reduces to quantifiable levels, resulting in higher time-zero and-dependent variability. RTN is observed as the sudden and random discrete drain current fluctuation under constant voltage,