Tuning the dzyaloshinskii−moriya interaction in pt/co/mgo heterostructures through mgo thickness

作     者：Cao, Anni Zhang, Xueying Koopmans, Bert Peng, Shouzhong Zhang, Yu Wang, Zilu Yan, Shaohua Yang, Hongxin Zhao, Weisheng 

作者机构：Fert Beijing Institute BDBC School of Electronic and Information Engineering Beihang University Beijing China Centre for Nanoscience and Nanotechnology University Paris-Saclay Orsay France Beihang-Goertek Joint Microelectronics Institute Qingdao Research Institute Beihang University Qingdao China Department of Applied Physics Institute for Photonic Integration Eindhoven University of Technology Eindhoven Netherlands Key Laboratory of Magnetic Materials and Devices Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo Zhejiang China 

出 版 物：《arXiv》 (arXiv)

年 卷 期：2017年

核心收录：

主　　题：Domain walls 

摘      要：The interfacial Dzyaloshinskii−Moriya interaction (DMI) in the ferromagnetic/heavy metal ultra-thin film structures, has attracted a lot of attention thanks to its capability to stabilize Néel-type domain walls (DWs) and magnetic skyrmions for the realization of non-volatile memory and logic devices. In this study, we demonstrate that magnetic properties in perpendicularly magnetized Ta/Pt/Co/MgO/Pt heterostructures, such as magnetization and DMI, can be significantly influenced by the MgO thickness. To avoid the excessive oxidation of Co, an ultrathin Mg layer is inserted to improve the quality of Co-MgO interface. By using field-driven domain wall expansion in the creep regime, we find that non-monotonic tendencies of the DMI field appear when changing the thickness of MgO. With the insertion of a monatomic Mg layer, the strength of DMI could reach a high level and saturates. We conjecture that the efficient control of DMI is a result of subtle changes of both Pt/Co and Co/MgO interfaces, which provides a method to optimize the design of ultrathin structures achieving skyrmion electronics. Copyright © 2017, The Authors. All rights reserved.