Transforming Polymorphs via Meniscus-Assisted Solution-Shearing Conjugated Polymers for Organic Field-Effect Transistors

作     者：Chen, Shuwen Zhu, Shuyin Lin, Zhiqun Peng, Juan 

作者机构：Fudan Univ Dept Macromol Sci State Key Lab Mol Engn Polymers Shanghai 200433 Peoples R China Georgia Inst Technol Sch Mat Sci & Engn Atlanta GA 30332 USA 

出 版 物：《ACS NANO》 (ACS纳米)

年 卷 期：2022年第16卷第7期

页      面：11194-11203页

核心收录：

学科分类：07[理学] 070203[理学-原子与分子物理] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0702[理学-物理学] 

基　　金：National Natural Science Foundation of China [22173023, 21922503] Natural Science Foundation of Shanghai [21ZR1405800] Shangha i Synchrotron Radiation Facility of China 

主　　题：polymorph transformation polythiophene meniscus-assisted solution shearing organic field-effect transistors crystal orientation charge transport 

摘      要：The ability to tune polymorphs of conjugated polymers affords a robust platform for investigating the processing-structure-property relationship. However, simple and generalizable routes to polymorphs have yet to be realized. Herein, we report a viable meniscus-assisted solution-shearing (MASS) strategy to effectively modulate polymorphs (i.e., polymorphs I and II) of poly(3-butylthiophene) (P3BT) and scrutinize the correlation between the two different polymorphs and charge transport characteristics. Specifically, polymorph II exists solely in drop-cast P3BT films. Intriguingly, confined shearing of P3BT renders efficient transformation of polymorph II to I. The kinetics of polymorph transformation associated with the changes in molecular packing and thus photophysical properties are elucidated. The resulting organic field-effect transistors reveal a strong correlation of device performance to attained polymorphs and crystal orientations of P3BT. Such polymorph transformation via the convenient MASS technique can be readily extended to other conjugated polymers of interest. This study highlights the robustness of MASS in regulating polymorphs of conjugated polymers to interrogate their interdependence of processing, structure, and property for a wide range of optoelectronic applications.