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作者机构:Center for Topological Functional Materials and Henan Key Laboratory of Photovoltaic Materials Henan University Kaifeng 475004 China International Center for Quantum Design of Functional Materials (ICQD) University of Science and Technology of China Hefei Anhui 230026 China National Laboratory of Solid State Microstructures and College of Engineering and Applied Sciences Nanjing University Nanjing 210093 China International Laboratory for Quantum Functional Materials of Henan Zhengzhou University Zhengzhou 450003 China Department of Physics National University of Singapore 2 Science Drive 3 Singapore 117542
出 版 物:《Physical Review B》 (Phys. Rev. B)
年 卷 期:2022年第106卷第7期
页 面:075431-075431页
核心收录:
基 金:Anhui Initiative in Quantum Information Technologies, (AHY170000) Key Research Project of Henan Provincial Higher Education, (20A140005) Plan for Leading Talent of Fundamental Research of the Central China in 2020, and Intelligence Introduction Plan of Henan Province, (CXJD2021008) National Natural Science Foundation of China, NSFC, (11634011, 11974323, 12004099, 12074099) National Natural Science Foundation of China, NSFC Chinese Academy of Sciences, CAS, (XDB30000000) Chinese Academy of Sciences, CAS China Postdoctoral Science Foundation, (2020M682273) China Postdoctoral Science Foundation National Key Research and Development Program of China, NKRDPC, (2017YFA0303500) National Key Research and Development Program of China, NKRDPC Natural Science Foundation for Young Scientists of Shanxi Province, (202300410060) Natural Science Foundation for Young Scientists of Shanxi Province
主 题:2-dimensional systems Monolayer films Van der Waals systems Molecular beam epitaxy Scanning tunneling spectroscopy
摘 要:Fabrication of isostructural isovalent alloys is a powerful approach to discovering novel materials with emergent properties. This approach has been well established in traditional bulk materials, yet remains to be fully exploited in two-dimensional systems. Here we use black- phosphorus (BP)-like group-VA binary alloyed monolayers on BP-like group IV-VI substrates to demonstrate the enabling power of isomorphism and isovalency in fabricating two-dimensional alloyed monolayers with tunable properties. We achieve the formation of nearly freestanding BP-like Sb1−xBix (0≤x≤1) monolayers on the GeSe substrate, with a semiconductor-to-metal transition and tunable moiré superstructures as x increases. In contrast, BP-like PbxBi1−x monolayers can be stabilized only for low Pb concentrations, and the contrasting behaviors are attributable to preservation or breakdown of isovalency in the two cases. This study establishes a generic approach to growing alloyed monolayers via van der Waals imprinting, opening a new avenue for materials discoveries with desirable functionalities.