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内蒙古自治区呼和浩特市赛罕区大学西街235号 邮编: 010021
作者机构:State Key Laboratory of Alternate Electrical Power System with Renewable Energy SourcesNorth China Electric Power UniversityBeijingChina China Electric Power Research InstituteBeijingChina Electrical Engineering DivisionUniversity of CambridgeCambridgeUK
出 版 物:《High Voltage》 (高电压(英文))
年 卷 期:2022年第7卷第6期
页 面:1099-1110页
核心收录:
学科分类:08[工学] 0805[工学-材料科学与工程(可授工学、理学学位)] 080502[工学-材料学]
基 金:National Natural Science Foundation of China,Grant/Award Number:51877082 Science and Technology Project of State Grid Corporation of China,Grant/Award Number:7000-202158440A-0-0-00
主 题:composites ZnS:Cu filler
摘 要:Electroluminescent composites have considerable potential for applications in photoelectric display,electric field measurement and other fields due to their advantages of simple preparation and uniform ***,high voltage required by the operation of electroluminescent composites hinders their applications in the electric domain,and research on the relationship between electroluminescence principle of composites and filler intrinsic attributes is *** this paper,the effects of electric field strength,filler mass fraction and voltage frequency on the electroluminescence intensity of ZnS:Cu/epoxy composites are studied,which are majorly used as the luminescent layer of electroluminescent *** enhance the electroluminescence intensity of composites,high-temperature sintered BaTiO_(3)and zinc oxide whiskers(ZnOw)particles are introduced in the base *** finite element method is applied to verify that the matrix of high dielectric constant is in favour of improving the electroluminescence intensity of *** band structure of the ZnS:Cu particle is calculated based on the density functional theory+U method to analyse the intrinsic relationship between electroluminescence and particle electronic *** paper provides a basis for the research of high electroluminescence intensity devices and will be conducive to better understanding on the relationship between electroluminescence principle and filler intrinsic attributes.