Phosphorus diffusion and activation in fluorine co-implanted germanium after excimer laser annealing

作     者：Chen Wang Wei-Hang Fan Yi-Hong Xu Yu-Chao Zhang Hui-Chen Fan Cheng Li Song-Yan Cheng 王尘;范伟航;许怡红;张宇超;范慧晨;李成;陈松岩

作者机构：Fujian Provincial Key Laboratory of Optoelectronic Technology and DevicesSchool of Opto-electronic and Communiction EngineeringXiamen University of TechnologyXiamen 361024China Department of PhysicsSemiconductor Photonics Research CenterXiamen UniversityXiamen 361005China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2022年第31卷第9期

页      面：619-623页

核心收录：

学科分类：080901[工学-物理电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 080502[工学-材料学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0803[工学-光学工程] 

基　　金：Project supported by the National Natural Science Foundation of China(Grant No.61904155) the Science and technology Project of Fujian Provincial Department of Education,China(Grant No.JAT200484) the Natural Science Foundation of Fujian Province,China(Grant No.2018J05115) the Scientific Research Projects of Xiamen University of Technology,China(Grant No.YKJCX2020078) 

主　　题：phosphorus diffusion activation concentration co-implanted fluorine germanium excimer laser annealing 

摘      要：The diffusion and the activation of phosphorus in phosphorus and fluorine co-implanted Ge after being annealed by excimer laser are *** results prove that the fluorine element plays an important role in suppressing phosphorus diffusion and enhancing phosphorus ***,the rapid thermal annealing process is utilized to evaluate and verify the role of fluorine *** the initial annealing of co-implanted Ge,it is easier to form high bonding energy FnVm clusters which can stabilize the excess vacancies,resulting in the reduced vacancy-assisted diffusion of *** maximum activation concentration of about 4.4 ×10^(20) cm^(-3) with a reduced diffusion length and dopant loss is achieved in co-implanted Ge that is annealed at a tailored laser fluence of 175 mJ/cm^(2).The combination of excimer laser annealing and co-implantation technique provides a reference and guideline for high level n-type doping in Ge and is beneficial to its applications in the scaled Ge MOSFET technology and other devices.