Hermetic Packaging Based on Cu-Sn and Au-Au Dual Bonding for High-Temperature Graphene Pressure Sensor

作     者：Wang, Junqiang Zhang, Haikun Chen, Xuwen Li, Mengwei 

作者机构：North Univ China Acad Adv Interdisciplinary Res Taiyuan 030051 Peoples R China North Univ China Not Key Lab Instrumentat Sci & Dynam Measurement Taiyuan 030051 Peoples R China 

出 版 物：《MICROMACHINES》 (Micromachines)

年 卷 期：2022年第13卷第8期

页      面：1191-1191页

核心收录：

学科分类：08[工学] 0804[工学-仪器科学与技术] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0802[工学-机械工程] 0702[理学-物理学] 

基　　金："173" Projects of China [2021JCJQJJ0172  2020JCJQZD043  2017JCJQZD006] 

主　　题：Cu-Sn bonding Au-Au bonding graphene high-temperature pressure sensor 

摘      要：A chip-level hermetic package for a high-temperature graphene pressure sensor was investigated. The silicon cap, chip and substrate were stacked by Cu-Sn and Au-Au bonding to enable wide-range measurements while guaranteeing a high hermetic package. Prior to bonding, the sample was treated with Ar (5% H-2) plasma. The Cu-Sn bonding was firstly performed at 260 degrees C for 15 min with a pressure of 9.9 MPa, and the corresponding process conditions for Au-Au bonding has increased to 300 degrees C, 20 min and 19.8 MPa respectively. The average shearing strength was 14.3 MPa, and an excellent leak rate of 1.72 x 10(-4) Pa center dot cm(3)/s was also achieved. After high-temperature storage (HTS) at 350 degrees C for 10 h, the resistance of graphene decreased slightly because the dual bonding provided oxygen-free environment for graphene. The leakage rate of the device slightly increased to 2.1 x 10(-4) Pa center dot cm(3)/s, and the average shear strength just decreased to 13.5 MPa. Finally, under the pressure range of 0-100 MPa, the graphene pressure sensor exhibited a high average sensitivity of 3.11 omega/MPa. In conclusion, the dual bonding that combined Cu-Sn and Au-Au is extremely suitable for hermetic packaging in high-temperature graphene pressure sensors.