Enhanced Anomalous Hall Effect of Pt on an Antiferromagnetic Insulator with Fully Compensated Surface

作     者：Yu Bai Zhe Wang Na Lei Wisal Muhammad Lifeng Xiang Qiang Li Huilin Lai Yinyan Zhu Wenbing Wang Hangwen Guo Lifeng Yin Ruqian Wu Jian Shen Yu Bai;Zhe Wang;Na Lei;Wisal Muhammad;Lifeng Xiang;Qiang Li;Huilin Lai;Yinyan Zhu;Wenbing Wang;Hangwen Guo;Lifeng Yin;Ruqian Wu;Jian Shen

作者机构：State Key Laboratory of Surface Physics and Institute for Nanoelectronics Devices and Quantum ComputingFudan UniversityShanghai 200433China Shanghai Qi Zhi InstituteShanghai 200232China Department of PhysicsFudan UniversityShanghai 200433China Zhangjiang Fudan International Innovation CenterFudan UniversityShanghai 201210China Shanghai Research Center for Quantum SciencesShanghai 201315China Fert Beijing InstituteBDBCSchool of Electronic and Information EngineeringBeihang UniversityBeijing 100191China Department of Physics and AstronomyUniversity of CaliforniaIrvineCalifornia 92697USA Collaborative Innovation Center of Advanced MicrostructuresNanjing 210093China 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2022年第39卷第10期

页      面：60-65页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 0702[理学-物理学] 

基　　金：supported by the National Key Research Program of China(Grant No.2020YFA0309100) the National Natural Science Foundation of China(Grant Nos.11991062,12074075,12074073,12074071,and 11904052) the Shanghai Municipal Science and Technology Major Project(Grant No.2019SHZDZX01) the Shanghai Municipal Natural Science Foundation(Grant Nos.20501130600,22ZR1407400,and 22ZR1408100) 

主　　题：effect ferromagnetic resistivity 

摘      要：We report a significantly enhanced anomalous Hall effect(AHE)of Pt on antiferromagnetic insulator thin film(3-unit-cell La_(0.7)Sr_(0.3)MnO_(3),abbreviated as LSMO),which is one order of magnitude larger than that of Pt on other ferromagnetic(e.g.Y_(3)Fe_(5)O_(12))and antiferromagnetic(***_(2)O_(3))insulator thin *** experiments demonstrate that the antiferromagnetic La_(0.7)Sr_(0.3)MnO_(3)with fully compensated surface suppresses the positive anomalous Hall resistivity induced by the magnetic proximity effect and facilitates the negative anomalous Hall resistivity induced by the spin Hall *** changing the substrate’s temperature during Pt deposition,we observed that the diffusion of Mn atoms into Pt layer can further enhance the *** anomalous Hall resistivity increases with increasing temperature and persists even well above the Neel temperature(T_(N))of *** Monte Carlo simulations manifest that the unusual rise of anomalous Hall resistivity above T_(N)originates from the thermal induced magnetization in the antiferromagnetic insulator.