Unconventional Resistivity Scaling in Topological Semimetal CoSi

作     者：Lien, Shang-Wei Garate, Ion Bajpai, Utkarsh Huang, Cheng-Yi Hsu, Chuang-Han Tu, Yi-Hsin Lanzillo, Nicholas A. Bansil, Arun Chang, Tay-Rong Liang, Gengchiau Lin, Hsin Chen, Ching-Tzu 

作者机构：Department of Physics National Cheng Kung University Tainan701 Taiwan Département de Physique Institut Quantique and Regroupement Québécois sur les Matériaux de Pointe Université de Sherbrooke SherbrookeQCJ1K 2R1 Canada IBM Research 257 Fuller Road AlbanyNY12203 United States Department of Physics Northeastern University BostonMA02115 United States Institute of Physics Academia Sinica Taipei11529 Taiwan  Tainan701 Taiwan Physics Division National Center for Theoretical Sciences Hsinchu Taiwan Department of Electrical and Computer Engineering College of Design and Engineering National University of Singapore Singapore Singapore IBM T.J. Watson Research Center Yorktown HeightsNY10598 United States 

出 版 物：《arXiv》 (arXiv)

年 卷 期：2022年

核心收录：

主　　题：Topology 

摘      要：Nontrivial band topologies in semimetals lead to robust surface states that can contribute dominantly to the total conduction. This may result in reduced resistivity with decreasing feature size contrary to conventional metals, which may highly impact the semiconductor industry. Here we study the resistivity scaling of a representative topological semimetal CoSi using realistic band structures and Green’s function methods. We show that there exists a critical thickness !! dividing different scaling trends. Above !!, when the defect density is low such that surface conduction dominates, resistivity reduces with decreasing thickness;when the defect density is high such that bulk conduction dominates, resistivity increases as in conventional metals. Below !!, the persistent remnants of the surface states give rise to decreasing resistivity down to the ultrathin limit, unlike in topological insulators. The observed CoSi scaling can apply to broad classes of topological semimetals, providing guidelines for materials screening and engineering. Our study shows that topological semimetals bear the potential of overcoming the resistivity scaling challenges in back-end-of-line interconnect applications. © 2022, CC BY.