Gate-tunable spin valve effect in Fe_(3)GeTe_(2)-based van der Waals heterostructures

作     者：Ling Zhou Junwei Huang Ming Tang Caiyu Qiu Feng Qin Caorong Zhang Zeya Li Di Wu Hongtao Yuan 

作者机构：National Laboratory of Solid State MicrostructuresJiangsu Key Laboratory of Artificial Functional MaterialsCollege of Engineering and Applied Sciencesand Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjingthe People's Republic of China 

出 版 物：《InfoMat》 (信息材料（英文）)

年 卷 期：2023年第5卷第3期

页      面：1-10页

核心收录：

学科分类：0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 070205[理学-凝聚态物理] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学] 

基　　金：supported by the National Natural Sci-ence Foundation of China(91750101,21733001,52072168,51861145201) the National Key Basic Research Program of the Ministry of Science and Technology of China(2018YFA0306200,2021YFA1202901) the Fundamental Research Funds for the Central Universities(021314380078,021314380104,021314380147) Jiangsu Key Laboratory of Artificial Functional Materials 

主　　题：Fe_(3)GeTe_(2)magnetic tunnel junction magnetoresistance spin valve van der Waals heterostructure 

摘      要：Magnetic tunnel junctions(MTJs),a prominent type of spintronic device based on the spin valve effect,have facilitated the development of numerous spintronic *** technical appeal for the next-generation MTJ devices has been proposed in two directions:improving device performance by utilizing advanced two-dimensional(2D)ferromagnetic materials or extending device functionalities by exploring the gate-tunable magnetic properties of *** on the recent development of 2D magnets with the ease of external stimuli,such as electric field,due to their reduced dimensions,reliable prospects for gate-tunable MTJ devices can be achieved,shedding light on the great potential of next-generation MTJs with multiple functionalities for various application *** the electrical gate-tunable MTJ device is highly desirable for practical spintronic devices,it has not yet been ***,we demonstrate the experimental realization of a spin valve device by combining a vertical Fe_(3)GeTe_(2)/h-BN/Fe_(3)GeTe_(2) MTJ with an electrolyte *** magnetoresistance ratio(MR ratio)of 36%for the intrinsic MTJ confirms the good performance of the *** electrolyte gating,the tunneling MR ratio of Fe_(3)GeTe_(2)/h-BN/Fe_(3)GeTe_(2) MTJ can be elevated 2.5 times,from 26%to 65%.Importantly,the magnetic fields at which the magnetoresistance switches for the MTJ can be modulated by electrical gating,providing a promising method to control the magnetization configuration of the *** work demonstrates a gate-tunable MTJ device toward the possibility for gate-controlled spintronic devices,paving the way for performing 2D magnetism manipulations and exploring innovative spintronic applications.