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作者机构:Department of Electrical and Computer Engineering University of Minnesota 200 Union St. SE MinneapolisMN55455 United States Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology 77 Massachusetts Ave. Room 38-401 CambridgeMA02139 United States
出 版 物:《arXiv》 (arXiv)
年 卷 期:2022年
核心收录:
摘 要:Unidirectional magnetoresistance (UMR) has been observed in a variety of stacks with ferromagnetic/spin Hall material bilayer structures. In this work, we reported UMR in antiferromagnetic insulator Fe2O3/Pt structure. The UMR has a negative value, which is related to interfacial Rashba coupling and band splitting. Thickness-dependent measurement reveals a potential competition between UMR and the unidirectional spin Hall magnetoresistance (USMR). This work revealed the existence of UMR in antiferromagnetic insulators/heavy metal bilayers and broadens the way for the application of antiferromagnet-based spintronic devices. © 2022, CC BY.