Nanowires mediated growth ofβ-Ga_(2)O_(3)nanobelts for hightemperature(>573 K)solar-blind photodetectors

作     者：Xiaobin Zou Dongyu Xie Yong Sun Chengxin Wang Xiaobin Zou;Dongyu Xie;Yong Sun;Chengxin Wang

作者机构：State Key Laboratory of Optoelectronic Materials and TechnologiesSchool of Materials Science and EngineeringSun Yat-sen UniversityGuangzhou 510275China State Key Laboratory of Optoelectronic Materials and Technologies and Guangdong Province Key Laboratory of Display Material and TechnologySchool of Electronics and Information TechnologySun Yat-sen UniversityGuangzhou 510275China 

出 版 物：《Nano Research》 (纳米研究（英文版）)

年 卷 期：2023年第16卷第4期

页      面：5548-5554页

核心收录：

学科分类：081704[工学-应用化学] 07[理学] 08[工学] 0817[工学-化学工程与技术] 0703[理学-化学] 070301[理学-无机化学] 

基　　金：supported by the National Natural Science Foundation of China(Nos.91963210,U1801255,and 52122206) Key Research Program of Guangdong Province(No.2020B0101690001) 

主　　题：β-Ga_(2)O_(3) low-dimensional nanostructures chemical vapor deposition high temperature photodetectors solar-blind photodetectors 

摘      要：β-Ga_(2)O_(3),with ultra-wide bandgap,high absorption coefficient for high-energy ultraviolet(UV)photons,and high structural stability toward harsh-environment,has been receiving persistent attention for deep ultraviolet photodetectors ***,realization of devices with high tolerance toward high temperature faces great challenges due to considerable background signals mainly arising from abundant thermal excited ***,nanowire-mediated high-qualityβ-Ga_(2)O_(3)nanobelts with ultra-thin thickness and length up to several hundred micrometers were achieved via a simple catalyst-free chemical vapor deposition *** resulted microdevice output superior optoelectric figure of merits among numerous reports aboutβ-Ga_(2)O_(3),i.e.,ultra-low dark current(below the detection limit of 10−12 A),high responsivity(1,320 A/W),and high spectral selectivity working under low voltage(~2 V).More importantly,the performance remains robust at elevated temperature higher than 573 *** results indicate a large prospect for low-voltage driven deep ultraviolet photodetectors with good sensitivity and stability at harsh environments.