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作者机构:State Key Laboratory for Mechanical Behavior of MaterialsXi'an Jiaotong UniversityXi'anChina School of Materials Science and EngineeringBeihang UniversityBeijingChina Center for High Pressure Science and Technology Advanced Research(HPSTAR)BeijingChina Institute of Science and Technology AustriaKlosterneuburgAustria
出 版 物:《Interdisciplinary Materials》 (交叉学科材料(英文))
年 卷 期:2023年第2卷第1期
页 面:161-170页
核心收录:
学科分类:07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 0702[理学-物理学]
基 金:National Science Fund for Distinguished Young Scholars,Grant/Award Number:51925101 National Natural Science Foundation of China,Grant/Award Number:52172236 Fundamental Research Funds for the Central Universities,Grant/Award Number:xtr042021007 Top Young Talents Programme of Xi'an Jiaotong University
主 题:electrical transport properties interstitial doping PbS thermal conductivity ZT_(ave)
摘 要:Lead sulfide(PbS)presents large potential in thermoelectric application due to its earth-abundant S ***,its inferior average ZT(ZTave)value makes PbS less competitive with its analogs PbTe and *** promote its thermoelectric performance,this study implements strategies of continuous Se alloying and Cu interstitial doping to synergistically tune thermal and electrical transport properties in n-type ***,the lattice parameter of 5.93Åin PbS is linearly expanded to 6.03Åin PbS_(0.5)Se_(0.5)with increasing Se alloying *** expanded lattice in Se-alloyed PbS not only intensifies phonon scattering but also facilitates the formation of Cu *** on the PbS_(0.6)Se_(0.4)content with the minimal lattice thermal conductivity,Cu interstitials are introduced to improve the electron density,thus boosting the peak power factor,from 3.88μW cm^(−1)K^(−2)in PbS_(0.6)Se_(0.4)to 20.58μW cm^(−1)K^(−2)in PbS0.6Se0.4−1%***,the lattice thermal conductivity in PbS_(0.6)Se_(0.4)−x%Cu(x=0-2)is further suppressed due to the strong strain field caused by Cu ***,with the lowered thermal conductivity and high electrical transport properties,a peak ZT~1.1 and ZTave~0.82 can be achieved in PbS_(0.6)Se_(0.4)−1%Cu at 300–773K,which outperforms previously reported n-type PbS.