Improving the performance of high-power broad-area lasers by suppressing cavity modes propagating in the lateral dimension

作     者：范建 周旭彦 张伟桥 王宇飞 渠红伟 齐爱谊 郑婉华 Jian Fan;Xuyan Zhou;Weiqiao Zhang;Yufei Wang;Hongwei Qu;Aiyi Qi;Wanhua Zheng

作者机构：Laboratory of Solid-State Optoelectronics Information TechnologyInstitute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing 100049China State Key Laboratory on Integrated OptoelectronicsInstitute of SemiconductorsChinese Academy of SciencesBeijing 100083China Weifang Academy of Advanced Opto-Electronic CircuitsWeifang 261071China College of Future TechnologyUniversity of Chinese Academy of SciencesBeijing 101408China 

出 版 物：《Chinese Optics Letters》 (中国光学快报（英文版）)

年 卷 期：2023年第21卷第4期

页      面：69-73页

核心收录：

学科分类：080901[工学-物理电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 0803[工学-光学工程] 

基　　金：supported by the National Key R&D Program of China(No.2021YFA1400604) the National Natural Science Foundation of China(Nos.91850206 and 62075213) 

主　　题：high power broad area laser resonant mode amplified spontaneous emission 

摘      要：We first study the effect of cavity modes propagating in the lateral dimension on high-power semiconductor lasers with a large stripe width.A sidewall microstructure was fabricated to prevent optical feedback of lateral resonant ***,we demonstrate the existence of lateral resonant modes in the Fabry–Perot cavity with a large stripe ***,we design the corresponding devices and compare them with conventional broad-area diode *** a 15%reduction in threshold current and a 27%increase in maximum electro-optical conversion efficiency are *** amplified spontaneous emission spectrum is narrowed,which proves that lateral microstructures suppress optical feedback of lateral resonant *** a large continuous-wave operation,the maximum output power of laser device is43.03 W,about 1 W higher than that of the standard broad-area laser at 48 A.