High-efficiency resistive switch and artificial synaptic simulation in antimony-based perovskite devices

作     者：LUO FeiFei WU YanZhao TONG JunWei XU DaKe QIN GaoWu TIAN FuBo ZHANG XianMin 

作者机构：Key Laboratory for Anisotropy and Texture of Materials(Ministry of Education)School of Materials Science and EngineeringNortheastern UniversityShenyang 110819China Department of PhysicsFreie Universitat Berlin14195 BerlinGermany State Key Laboratory of Superhard MaterialsCollege of PhysicsJilin UniversityChangchun 130012China 

出 版 物：《Science China(Technological Sciences)》 (中国科学（技术科学英文版）)

年 卷 期：2023年第66卷第4期

页      面：1141-1151页

核心收录：

学科分类：080801[工学-电机与电器] 0808[工学-电气工程] 07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：supported by the National Natural Science Foundation of China(Grant Nos.51971057 and 52271238) the Liaoning Revitalization Talents Program(Grant No.XLYC2002075) the Research Funds for the Central University(Grant Nos.N2202004 and N2102012) 

主　　题：perovskitefilms resistive switching artificial synapse 

摘      要：Three kinds of Cs_(3)Sb_(2)X_(9)(X=I,Br,Cl)perovskite films have been prepared to fabricate the resistive memory devices with the structure of Al/Cs_(3)Sb_(2)X_(9)(X=I,Br,Cl)/indium tin oxide(ITO)*** devices exhibited a bipolar resistive switching behavior at room temperature by applying scanning voltage of 0→1→0→-1.8→0 *** switching voltages in the Al/Cs_(3)Sb_(2)X_(9)(X=I,Br,Cl)/ITO devices gradually decreased with the X from I,Br to Cl due to the different migration rates of halide vacancy in perovskite films,which is confirmed by the first-principles calculations of activation *** ON/OFF ratio under the reading voltage of 0.1 V significantly increased up to 100 in the Al/Cs_(3)Sb_(2)Cl_(9)/ITO device,which is nearly 10 and 3 times larger than that of the Al/Cs3Sb2I9/ITO device and the Al/Cs_(3)Sb_(2)Br_(9)/ITO device,*** endurance cycles and retention time of current devices were evaluated,showing the excellent electrical ***,the three kinds of Al/Cs_(3)Sb_(2)X_(9)(X=I,Br,Cl)/ITO device can successfully simulate the short-term plasticity of biological *** Al/Cs_(3)Sb_(2)Cl_(9)/ITO device showed the highest paired-pulsed facilitation index compared with that of other two devices,which was explored for the longterm plasticity and learning experience processes of *** addition,the Al/Cs_(3)Sb_(2)Cl_(9)/ITO device established associative learning behavior by simulating the Pavlov’s dog experiment.