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作者机构:State Key Laboratory of Superhard MaterialsKey Laboratory of Automobile Materials of Ministry of EducationSchool of Materials Science and EngineeringJilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy MaterialsJilin UniversityChangchun 130012China College of Information Science and EngineeringJiaxing UniversityJiaxing 314001China Electron Microscopy CenterJilin UniversityChangchun 130012China State Key Laboratory of Integrated OptoelectronicsCollege of Electronic Science and EngineeringInternational Center of Future ScienceJilin UniversityChangchun 130012China National Key Laboratory of Science and Technology on Advanced Composites in Special EnvironmentsHarbin Institute of TechnologyHarbin 150080China
出 版 物:《Light(Science & Applications)》 (光(科学与应用)(英文版))
年 卷 期:2023年第12卷第6期
页 面:982-993页
核心收录:
学科分类:080901[工学-物理电子学] 0809[工学-电子科学与技术(可授工学、理学学位)] 08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 0803[工学-光学工程]
基 金:The authors gratefully acknowledge the financial support from National Natural Science Foundation of China(Grant Nos.52032004,52272153) KLOMT Key Laboratory Open Project(2022KLOMT02-05)
主 题:transparent neglected enable
摘 要:The long-standing challenge in designing far-infrared transparent conductors(FIRTC)is the combination of high plasma absorption edge(λ_(p))and high conductivity(σ).These competing requirements are commonly met by tuning carrier concentration or/and effective carrier mass in a metal oxide/oxonate with low optical dielectric constant(ε_(opt)=2-7).However,despite the highσ,the transparent band is limited to mid-infrared(λ_(p)15 andλ_(p)15μ*** FIRTC crystals are mainly octahedrally-coordinated heavy-metal chalcogenides and their solid solutions with shallow-level *** highε_(opt)relies on the formation of electron-deficiency multicenter bonds resulting in the great electron-polarization *** new FIRTC enables us to develop the first“continuous filmtype far-infrared electromagnetic shielder that is unattainable using traditional ***,this study may inaugurate a new era in far-infrared optoelectronics.