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内蒙古自治区呼和浩特市赛罕区大学西街235号 邮编: 010021
作者机构:Beijing Inst Technol Sch Mat Sci & Engn Beijing 100081 Peoples R China Beijing Inst Technol Chongqing Innovat Ctr Chongqing 401120 Peoples R China Northeastern Univ Sch Mat Shenyang 110819 Peoples R China
出 版 物:《MATERIALS TODAY COMMUNICATIONS》 (Mater. Today Commun.)
年 卷 期:2023年第36卷
核心收录:
学科分类:08[工学] 0805[工学-材料科学与工程(可授工学、理学学位)] 080502[工学-材料学]
基 金:National Natural Science Foundation of China
主 题:CVD-SiC interlayer Plasma spraying Ablation resistance C C substrate
摘 要:To address the industrial usage of carbon/carbon (C/C) substrates with plasma-sprayed ZrB2/SiC coatings, a continuous and dense chemical vapor deposition (CVD)-SiC interlayer of 150 m was deposited on a C/C sub-strate. The integration of CVD-SiC with the C/C substrate and plasma sprayed (PS) ZrB2/SiC coatings results in a tight interface. The SiC interlayer significantly reducing thermal stress in the optimized composites up to 1828 Mpa, a decrease of approximately 60% compared to standard composites without CVD-SiC. Ablation tests con-ducted showed that the optimized composite displayed remarkable mass ablation rate of -11.7% after ablation for 600 s, with a notable increase of -3.5% even after ablation for 1800 s. After 600 s of ablation, the exposed SiO2 layer is approximately 500 m in size. After 900 s of ablation, the exposed SiO2 layer is approximately 1500 m. After 1800 s of ablation, the SiO2 is completely evaporated, exposing the C/C matrix, at which point the coating has failed. The SiC interlayer improve the ablation resistance due to the continuous SiO2 film formed by the self-sealing and O anti-diffusive properties.