Clean BN encapsulated 2D FETs with lithography compatible contacts

作     者：Liang, Binxi Wang, Anjian Zhou, Jian Ju, Shihao Chen, Jian Watanabe, Kenji Taniguchi, Takashi Shi, Yi Li, Songlin 

作者机构：National Laboratory of Solid-State Microstructures Collaborative Innovation Center of Advanced Microstructures Nanjing University Jiangsu Nanjing210023 China School of Electronic Science and Engineering Nanjing University Jiangsu Nanjing210023 China National Institute for Materials Science Ibaraki Tsukuba305-0044 Japan 

出 版 物：《arXiv》 (arXiv)

年 卷 期：2023年

核心收录：

主　　题：Field effect transistors 

摘      要：Device passivation through ultraclean hexagonal BN encapsulation is proven one of the most effective ways for constructing high-quality devices with atomically thin semiconductors that preserves the ultraclean interface quality and intrinsic charge transport behavior. However, it remains challenging to integrate lithography compatible contact electrodes with flexible distributions and patterns. Here, we report the feasibility in straightforwardly integrating lithography defined contacts into BN encapsulated 2D FETs, giving rise to overall device quality comparable to the state-of-the-art results from the painstaking pure dry transfer processing. Electronic characterization on FETs consisting of WSe2 and MoS2 channels reveals an extremely low scanning hysteresis of ~2 mV on average, a low density of interfacial charged impurity of ~1011 cm-2, and generally high charge mobilities over 1000 cm2V-1s-1 at low temperatures. The overall high device qualities verify the viability in directly integrating lithography defined contacts into BN encapsulated devices to exploit their intrinsic charge transport properties for advanced electronics. © 2023, CC BY-NC-SA.