Growth of α-Ga2O3 on α-Al2O3 by conventional molecular-beam epitaxy and metal-oxide-catalyzed epitaxy

作     者：McCandless, J.P. Protasenko, V. Rowe, D. Pieczulewski, N. Alonso-Orts, M. Williams, M.S. Eickhoff, M. Xing, H.G. Muller, D.A. Jena, D. Vogt, P. 

作者机构：School of Electrical and Computer Engineering Cornell University IthacaNY14853 United States Department of Material Science and Engineering Cornell University IthacaNY14853 United States Institute of Solid-State Physics University Bremen Otto-Hahn-Allee 1 Bremen28359 Germany Department of Material Science and Engineering Cornell University IthacaNY14853 United States Kavli Institute Cornell for Nanoscale Science Cornell University IthacaNY14853 United States Kavli Institute Cornell for Nanoscale Science Cornell University IthacaNY14853 United States School of Applied and Engineering Physics Cornell University IthacaNY14853 United States School of Electrical and Computer Engineering Cornell University IthacaNY14853 United States 

出 版 物：《arXiv》 (arXiv)

年 卷 期：2023年

核心收录：

主　　题：Gallium compounds 

摘      要：We report the growth of α-Ga2O3 on m-plane α-Al2O3 by conventional plasma-assisted molecular-beam epitaxy (MBE) and In-mediated metal-oxide-catalyzed epitaxy (MOCATAXY). We report a growth-rate-diagram for α-Ga2O3(1010 ¯ ), and observe (i) a growth rate increase, (ii) an expanded growth window, and (iii) reduced out-of-lane mosaic spread when MOCATAXY is employed for the growth of α-Ga2O3. Through the use of In-mediated catalysis, growth rates over 0.2 μm hr−1 and rocking curves with full width at half maxima of ∆ω ≈ 0.45◦ are achieved. Faceting is observed along the α-Ga2O3film surface and is explored through scanning transmission electron microscopy. © 2023, CC BY-NC-ND.