Enhancement and anisotropy of electron Landé factor due to spin-orbit interaction in semiconductor nanowires

作     者：Czarnecki, Julian Bertoni, Andrea Goldoni, Guido Wójcik, Pawel 

作者机构：AGH University of Krakow Faculty of Physics and Applied Computer Science al. A. Mickiewicza 30 Krakow30-059 Poland CNR-NANO S3 Istituto Nanoscienze Via Campi 213/a Modena41125 Italy Department of Physics Informatics and Mathematics University of Modena and Reggio Emilia via Campi 213/a Modena41125 Italy 

出 版 物：《arXiv》 (arXiv)

年 卷 期：2023年

核心收录：

主　　题：Anisotropy 

摘      要：We investigate the effective Landé factor in semiconductor nanowires with strong Rashba spin-orbit coupling. Using the k · p theory and the envelope function approach we derive a conduction band Hamiltonian where g∗ is explicitly related to the spin-orbit coupling contants αR. Our model includes orbital effects from the Rashba spin-orbit term, leading to a significant enhancement of the effective Landé factor which is naturally anisotropic. For nanowires based on the low-gap, high spin-orbit coupled material InSb, we investigate the anisotropy of the effective Landé factor with respect to the magnetic field direction, exposing a twofold symmetry for the bottom gate architecture. The anisotropy results from the competition between the localization of the envelope function and the spin polarization of the electronic state, both determined by the magnetic field direction. Copyright © 2023, The Authors. All rights reserved.