Multilevel optoelectronic hybrid memory based on N-doped Ge_(2)Sb_(2)Te_(5)film with low resistance drift and ultrafast speed

作     者：吴奔 魏涛 胡敬 王瑞瑞 刘倩倩 程淼 李宛飞 凌云 刘波 Ben Wu;Tao Wei;Jing Hu;Ruirui Wang;Qianqian Liu;Miao Cheng;Wanfei Li;Yun Ling;Bo Liu

作者机构：Suzhou Key Laboratory for Nanophotonic and Nanoelectronic Materials and Its DevicesSchool of Materials Science and EngineeringSuzhou University of Science and TechnologySuzhou 215009China State Key Laboratory of Functional Materials for InformaticsShanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2023年第32卷第10期

页      面：724-730页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 081201[工学-计算机系统结构] 0702[理学-物理学] 0812[工学-计算机科学与技术（可授工学、理学学位）] 

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.62205231 and 22002102) the Postgraduate Research&Practice Innovation Program of Jiangsu Province,China(Grant No.KYCX223271) Jiangsu Key Laboratory for Environment Functional Materials 

主　　题：multilevel optoelectronic hybrid memory N-doped Ge_(2)Sb_(2)Te_(5)thin film low resistance drift ultrafast speed 

摘      要：Multilevel phase-change memory is an attractive technology to increase storage capacity and density owing to its high-speed,scalable and non-volatile ***,the contradiction between thermal stability and operation speed is one of key factors to restrain the development of phase-change ***,N-doped Ge_(2)Sb_(2)Te_(5)-based optoelectronic hybrid memory is proposed to simultaneously implement high thermal stability and ultrafast operation *** picosecond laser is adopted to write/erase information based on reversible phase transition characteristics whereas the resistance is detected to perform information *** show that when N content is 27.4 at.%,N-doped Ge_(2)Sb_(2)Te_(5)film possesses high ten-year data retention temperature of 175℃and low resistance drift coefficient of 0.00024 at 85℃,0.00170 at 120℃,and 0.00249 at 150℃,respectively,owing to the formation of Ge–N,Sb–N,and Te–N *** SET/RESET operation speeds of the film reach 520 ps/13 *** parallel,the reversible switching cycle of the corresponding device is realized with the resistance ratio of three orders of ***-level reversible resistance states induced by various crystallization degrees are also obtained together with low resistance drift ***,the N-doped Ge_(2)Sb_(2)Te_(5)thin film is a promising phase-change material for ultrafast multilevel optoelectronic hybrid storage.