Real-Time of Channel Temperature Monitoring of P-Gan Hemts Based on Gate Leakage Current

作     者：Yin, Luqiao Wu, Shuang Ren, Kailin Zhang, Wenkui Zhang, Jianhua 

作者机构：School of Microelectronics Shanghai University Shanghai200444 China Shanghai Key Laboratory of Chips and Systems for Intelligent Connected Vehicle Shanghai University Shanghai200444 China Shanghai Collaborative Innovation Center of Intelligent Sensing Chip Technology Shanghai University Shanghai200444 China Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Shanghai200444 China 

出 版 物：《SSRN》 

年 卷 期：2023年

核心收录：

主　　题：High electron mobility transistors 

摘      要：The thermal response of Lateral GaN-based High Electron Mobility Transistor is much faster than that of Si-based power devices, owing to its higher power density. This makes temperature-related effects even more critical for GaN HEMTs, highlighting the necessity of monitoring their operating temperature to improve the efficiency and reliability of power circuits. In this article, a real-time monitoring method for channel temperature of p-GaN HEMTs using gate leakage current as a medium is proposed. The dependence of gate current on temperature is demonstrated by electro-thermal TCAD simulation on the reference p-GaN HEMT structure. An improved gate driver circuit is proposed that integrates a monitoring circuit utilizing the current amplification capability of bipolar transistors and an RC integrator network. The efficiency of the proposed solution is confirmed through SPICE electrothermal simulations and experimental validation on commercially available devices. In conclusion, the implementation of the monitoring circuit has been proved effective, offering a promising pathway to improve the reliability of p-GaN HEMTs. © 2023, The Authors. All rights reserved.