Side-Gate BN-MoS2 Transistor for Reconfigurable Multifunctional Electronics

作     者：Zeng, Daobing Ding, Rongxiang Liu, Guanyu Lu, Huihui Zhang, Miao Xue, Zhongying Tian, Ziao Di, Zengfeng 

作者机构：Chinese Acad Sci Shanghai Inst Microsyst & Informat Technol Natl Key Lab Mat Integrated Circuits Shanghai 200050 Peoples R China Univ Chinese Acad Sci Ctr Mat Sci & Optoelect Engn Beijing 100049 Peoples R China 

出 版 物：《ADVANCED ELECTRONIC MATERIALS》 (Adv. Electron. Mater.)

年 卷 期：2024年第10卷第2期

核心收录：

基　　金：National Natural Science Foundation of China National Key R&D Program of China [2022YFB3204800, 2022YFB4400100] Strategic Priority Research Program (B) of the Chinese Academy of Sciences [XDB30030000] Science and Technology Commission of Shanghai Municipality [21JC1406100] CAS Project for Young Scientists in Basic Research [YSBR-081] 51925208 61974157 62122082 

主　　题：floating gate memory MoS2 reconfigurable transistor rectification side gate 

摘      要：Developing 2D reconfigurable multifunctional devices is of great potential in further miniaturizing the chip area and simplifying circuit design. 2D van der Waals (vdW) heterostructures offer a novel approach to realizing reconfigurable multifunctional devices. Despite the numerous previous reports that have integrated various functions in a single 2D heterostructures device, most of those devices are based on a complex multilayer heterostructure or an air-unstable channel material, limiting their ability to be applied in integrated circuits. There is an urgent need to develop 2D reconfigurable multifunctional devices that have a simple structure and stable electrical properties. In this work, a side-gate reconfigurable device is illustrated based on simple BN-MoS2 vdW heterostructures. Three different functions in a single device have been achieved, including a diode, double-side-gate reconfigurable logic transistor, and top floating gate memory. A lateral n(+)-n homojunction is created along the MoS2 channel and the rectification ratio is above 10(5). Reconfigurable logic operations (OR, AND) can be achieved in a single double-side-gate device and the current on/off ratio is approximate to t 10(4). Moreover, the device can act as a floating gate memory under back gate operation. Those results pave the way for integrating the same reconfigurable multifunctional devices to realize complex electronic systems.