A hybrid pulsed laser deposition approach to grow thin films of chalcogenides

作     者：Surendran, Mythili Singh, Shantanu Chen, Huandong Wu, Claire Avishai, Amir Shao, Yu-Tsun Ravichandran, Jayakanth 

作者机构：Mork Family Department of Chemical Engineering and Materials Science University of Southern California Los AngelesCA90089 United States Core Center for Excellence in Nano Imaging University of Southern California Los AngelesCA90089 United States Ming Hsieh Department of Electrical and Computer Engineering University of Southern California Los AngelesCA90089 United States 

出 版 物：《arXiv》 (arXiv)

年 卷 期：2023年

核心收录：

主　　题：Thin films 

摘      要：Vapor-pressure mismatched materials such as transition metal chalcogenides have emerged as electronic, photonic, and quantum materials with scientific and technological importance. However, epitaxial growth of vapor-pressure mismatched materials are challenging due to differences in the reactivity, sticking coefficient, and surface adatom mobility of the mismatched species constituting the material, especially sulfur containing compounds. Here, we report a novel approach to grow chalcogenides - hybrid pulsed laser deposition - wherein an organosulfur precursor is used as a sulfur source in conjunction with pulsed laser deposition to regulate the stoichiometry of the deposited films. Epitaxial or textured thin films of sulfides with variety of structure and chemistry such as alkaline metal chalcogenides, main group chalcogenides, transition metal chalcogenides and chalcogenide perovskites are demonstrated, and structural characterization reveal improvement in thin film crystallinity, and surface and interface roughness compared to the state-of-the-art. The growth method can be broadened to other vapor-pressure mismatched chalcogenides such as selenides and tellurides. Our work opens up opportunities for broader epitaxial growth of chalcogenides, especially sulfide-based thin film technological applications. © 2023, CC BY.