Effects of Mg-doping temperature on the structural and electrical properties of nonpolar a-plane p-type GaN films

作     者：陈凯 赵见国 丁宇 胡文晓 刘斌 陶涛 庄喆 严羽 谢自力 常建华 张荣 郑有炓 Kai Chen;Jianguo Zhao;Yu Ding;Wenxiao Hu;Bin Liu;Tao Tao;Zhe Zhuang;Yu Yan;Zili Xie;Jianhua Chang;Rong Zhang;Youliao Zheng

作者机构：Key Laboratory of Advanced Photonic and Electronic MaterialsSchool of Electronic Science and EngineeringNanjing UniversityNanjing 210023China School of Electronics and Information EngineeringNanjing University of Information Science and TechnologyNanjing 210044China Xiamen UniversityXiamen 361005China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2024年第33卷第1期

页      面：631-636页

核心收录：

学科分类：08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：Project supported by the National Key Research and Development Program of China (Grant Nos.2021YFB3601000 and 2021YFB3601002) the National Natural Science Foundation of China (Grant Nos.62074077,61921005,61974062,62204121,and 61904082) Leading-edge Technology Program of Jiangsu Natural Science Foundation (Grant No.BE2021008-2) the China Postdoctoral Science Foundation (Grant No.2020M671441) 

主　　题：nonpolar a-plane GaN film Mg-doping temperature strains activation efficiency 

摘      要：Nonpolar(11–20) a-plane p-type GaN films were successfully grown on r-plane sapphire substrate with the metal–organic chemical vapor deposition(MOCVD) system. The effects of Mg-doping temperature on the structural and electrical properties of nonpolar p-type GaN films were investigated in detail. It is found that all the surface morphology, crystalline quality, strains, and electrical properties of nonpolar a-plane p-type GaN films are interconnected, and are closely related to the Mg-doping temperature. This means that a proper performance of nonpolar p-type GaN can be expected by optimizing the Mg-doping temperature. In fact, a hole concentration of 1.3×10^(18)cm^(-3), a high Mg activation efficiency of 6.5%,an activation energy of 114 me V for Mg acceptor, and a low anisotropy of 8.3% in crystalline quality were achieved with a growth temperature of 990℃. This approach to optimizing the Mg-doping temperature of the nonpolar a-plane p-type GaN film provides an effective way to fabricate high-efficiency optoelectronic devices in the future.