Direct Synthesis of Layer-Tunable and Transfer-Free Graphene on Device-Compatible Substrates Using Ion Implantation Toward Versatile Applications

作     者：Bingkun Wang Jun Jiang Kevin Baldwin Huijuan Wu Li Zheng Mingming Gong Xuehai Ju Gang Wang Caichao Ye Yongqiang Wang Bingkun Wang;Jun Jiang;Kevin Baldwin;Huijuan Wu;Li Zheng;Mingming Gong;Xuehai Ju;Gang Wang;Caichao Ye;Yongqiang Wang

作者机构：Department of Microelectronic Science and EngineeringSchool of Physical Science and TechnologyNingbo UniversityNingbo 315211China Key Laboratory of Soft Chemistry and Functional Materials of MOESchool of Chemistry and Chemical Engineering Nanjing University of Science and TechnologyNanjing 210094China Center for Integrated NanotechnologiesLos Alamos National LaboratoryLos Alamos 87545New MexicoUSA National Key Laboratory of Materials for Integrated CircuitsShanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Academy for Advanced Interdisciplinary Studies&Department of Materials Science and EngineeringSouthern University of Science and TechnologyShenzhen 518055China Guangdong Provincial Key Laboratory of Computational Science and Material DesignSouthern University of Science and TechnologyShenzhen 518055China Materials Science and Technology DivisionLos Alamos National LaboratoryLos Alamos 87545New MexicoUSA 

出 版 物：《Energy & Environmental Materials》 (能源与环境材料（英文）)

年 卷 期：2024年第7卷第5期

页      面：408-418页

核心收录：

学科分类：081702[工学-化学工艺] 08[工学] 0817[工学-化学工程与技术] 

基　　金：supported by the National Key R&D Program of China(No.2022YFA1203400) the National Natural Science Foundation of China under Grant(Nos.62174093 and 12075307) the Ningbo Youth Science and Technology Innovation Leading Talent Project under Grant(No.2023QL006) the Open Research Fund of China National Key Laboratory of Materials for Integrated Circuits(No.NKLJC-K2023-01) Guangdong Basic and Applied Basic Research Foundation(No.2022A1515110628) the support by LDRD Seedling ER project at Los Alamos National Laboratory,NM,USA(No.20210867ER) partially supported by Guangdong Provincial Key Laboratory of Computational Science and Material Design(No.2019B030301001) supported by Center for Computational Science and Engineering at Southern University of Science and Technology Shanghai Rising-Star Program(No.21QA1410900) the support from the Youth Innovation Promotion Association CAS 

主　　题：device applications dual-metal smart Janus substrate growth mechanism Ion implantation layer-tunable and transfer-free graphene 

摘      要：Direct synthesis of layer-tunable and transfer-free graphene on technologically important substrates is highly valued for various electronics and device *** of the art in the field is currently a two-step process:a high-quality graphene layer synthesis on metal substrate through chemical vapor deposition(CVD)followed by delicate layer transfer onto device-relevant ***,we report a novel synthesis approach combining ion implantation for a precise graphene layer control and dual-metal smart Janus substrate for a diffusion-limiting graphene formation to directly synthesize large area,high quality,and layer-tunable graphene films on arbitrary substrates without the post-synthesis layer transfer ***(C)ion implantation was performed on Cu-Ni film deposited on a variety of device-relevant substrates.A well-controlled number of layers of graphene,primarily monolayer and bilayer,is precisely controlled by the equivalent fluence of the implanted C-atoms(1 monolayer~4×10^(15)C-atoms/cm^(2)).Upon thermal annealing to promote Cu-Ni alloying,the pre-implanted C-atoms in the Ni layer are pushed toward the Ni/substrate interface by the top Cu layer due to the poor C-solubility in *** a result,the expelled C-atoms precipitate into a graphene structure at the interface facilitated by the Cu-like alloy *** removing the alloyed Cu-like surface layer,the layer-tunable graphene on the desired substrate is directly *** layer-selectivity,high quality,and uniformity of the graphene films are not only confirmed with detailed characterizations using a suite of surface analysis techniques but more importantly are successfully demonstrated by the excellent properties and performance of several devices directly fabricated from these graphene *** dynamics(MD)simulations using the reactive force field(ReaxFF)were performed to elucidate the graphene formation mechanisms in this novel synthesis *** the wide use of ion