Deterministic spin-orbit torque switching including the interplay between spin polarization and kagome plane in Mn3Sn

作     者：Zhengde Xu Xue Zhang Yixiao Qiao Gengchiau Liang Shuyuan Shi Zhifeng Zhu 

作者机构：School of Information Science and Technology ShanghaiTech University Shanghai 201210 China Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 China University of Chinese Academy of Sciences Beijing 100049 China Department of Electrical and Computer Engineering National University of Singapore 117576 Singapore Industry Academia Innovation School National Yang-Ming Chiao Tung University Hsinchu City 300093 Taiwan Fert Beijing Institute MIIT Key Laboratory of Spintronics School of Integrated Circuit Science and Engineering Beihang University Beijing 100191 China Shanghai Engineering Research Center of Energy Efficient and Custom AI IC Shanghai 201210 China 

出 版 物：《Physical Review B》 (物理学评论B辑：凝聚态物质与材料物理学)

年 卷 期：2024年第109卷第13期

页      面：134433-134433页

核心收录：

学科分类：07[理学] 0702[理学-物理学] 

基　　金：National Key Research and Development Program of China, NKRDPC, (2022YFB4401700) National Key Research and Development Program of China, NKRDPC National Natural Science Foundation of China, NSFC, (12104301, 12104032) National Natural Science Foundation of China, NSFC Beijing Nova Program, (Z211100002121123) Beijing Nova Program 

主　　题：Antiferromagnetism Spin dynamics Spin-orbit torque Antiferromagnets Chiral magnets Landau-Lifschitz-Gilbert equation 

摘      要：Previous research has demonstrated the spin-orbit torque (SOT) switching of Mn3Sn in configuration I, where the spin polarization σ resides within the kagome plane. However, this configuration has yielded several unexpected outcomes, giving rise to debates concerning the fundamental physics governing the switching process. Alternatively, in configuration II, σ is perpendicular to the kagome plane, which bears greater resemblance to the ferromagnetic system. In this study, we show successful SOT switching of Mn3Sn in configuration II, demonstrating behaviors more akin to ferromagnets, e.g., the critical switching current density (Jcrit) and external field (Hext) are in the order of 1010A/m2 and tens of Oersted, respectively. The switching result is also independent of the initial state. We further show that the distinctive spin structure of Mn3Sn leads to unique switching characteristics, including Jcrit increasing linearly with Hext and the opposite switching polarity to ferromagnetism. A switching phase diagram is further provided as a guideline for experimental demonstrations, offering a clear physical picture for the observed phenomena.