Tunable spin photogalvanic effect in two-dimensional van der Waals ferroelectric semiconductors with spin-orbit coupling

作     者：Shibo Fang Min Wang Xingyue Yang Zongmeng Yang Qiuhui Li Zhaochu Luo Jing Lu 

作者机构：State Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of Physics Peking University Beijing 100871 People's Republic of China School of Information Science and Engineering Hebei University of Science and Technology Shijiazhuang 050018 People's Republic of China Collaborative Innovation Center of Quantum Matter Beijing 100871 People's Republic of China Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MEMD) Peking University Beijing 100871 People's Republic of China Peking University Yangtze Delta Institute of Optoelectronics Nantong 226010 People's Republic of China Key Laboratory for the Physics and Chemistry of Nanodevices Peking University Beijing 100871 People's Republic of China Beijing Key Laboratory of Quantum Devices Peking University Beijing 100871 People's Republic of China 

出 版 物：《Physical Review B》 (Phys. Rev. B)

年 卷 期：2024年第109卷第19期

页      面：195202-195202页

核心收录：

基　　金：Fundamental Research Funds for the Central Universities Peking University, PKU National Natural Science Foundation of China, NSFC, (12274002, 12241401, 91964101) National Natural Science Foundation of China, NSFC Ministry of Science and Technology of the People's Republic of China, MOST, (2017YFA206303, 2022YFA1203904) Ministry of Science and Technology of the People's Republic of China, MOST 

主　　题：Photocurrent Photogalvanic effect Spin current Ferroelectrics Van der Waals systems Density functional theory Landauer formula 

摘      要：Spin photogalvanic effect is a nonlinear effect that can generate spin currents through optical excitation in intrinsic semiconductors without parity inversion symmetry. The efficient control of the spin photogalvanic effect is of great significance for the research of computing-in-memory devices. In this work, we investigate the ferroelectric modulation of the spin photogalvanic effect in two-dimensional (2D) van der Waals (vdW) ferroelectric semiconductors with spin-orbit coupling, including the in-plane, out-of-plane, and in-plane/out-of-plane-coupled ferroelectrics. We provide the general form of the spin photogalvanic effect controlled by ferroelectricity in 2D vdW spin-orbit coupling ferroelectric semiconductors by the second-order perturbation theory. In the in-plane ferroelectrics excited by circularly polarized light, we discover an effect where the reversal of the ferroelectric polarization will maintain the spin current unchanged but change the direction of the charge current. We name this effect the hidden spin current modulation. Using first-principles quantum transport simulation, we validate our theory with three cases of the black phosphorus-like Bi (in-plane ferroelectric), monolayer α-GeTe (out-of-plane ferroelectric), and α−In2Se3 (in-plane and out-of-plane coupled ferroelectric). Our study paves the way for the research of next-generation low-dimensional computing-in-memory devices.