Exploring Defect Behavior in Helium-Irradiated Single-Crystal and Nano-Engineered 3C-SiC at 800°C: A Synergy of Experimental and Simulation Techniques

作     者：Wang, Zhiqiang Zhang, Limin AlMotasem, Ahmed Tamer Li, Bingsheng Polcar, Tomas Daghbouj, Nabil 

作者机构：School of Nuclear Science and Technology Lanzhou University Gansu Lanzhou China Department of Control Engineering Faculty of Electrical Engineering Czech Technical University in Prague Technicka ´ 2 Prague 6160 00 Czech Republic State Key Laboratory for Environment-friendly Energy Materials Southwest University and Technology Sichuan Mianyang621010 China 

出 版 物：《SSRN》 

年 卷 期：2024年

核心收录：

主　　题：Silicon carbide 

摘      要：In this study, sc-and nc-3C-SiC samples were subjected to 30 keV He ion irradiation across various doses while maintaining a temperature 800°C. Employing techniques including Raman spectroscopy, TEM and nanoindentation, the alterations in microstructure and hardness resulting from He irradiation with various fluences were *** sc-SiC, irradiation prompted the formation of He platelets, resulting in a hardness increase of 6 GPa. In contrast, nc-SiC, characterized by a higher stacking fault density, exhibited the formation of bubbles, primarily at GBs, with fewer occurrences within the grain interior, leading to a hardness increase of 1 GPa. Notably, in both sc- and nc-SiC, hardness reached saturation and subsequently stabilized or declined with increasing *** MD cascade simulations, we discerned that various planar defects do not uniformly contribute to enhancing radiation resistance. For example, ISF and twins in SiC played a substantial role in altering defect density and configurations, thereby facilitating point defect annihilation. Conversely, ESF and Σ3 grain boundaries had a limited impact on defect production during a *** of cluster diffusivity revealed an accelerated movement of He-vacancy towards Gbs compared to other planar defects. Moreover, the scarcity of point defects and constrained mobility of He towards stacking faults in nc-SiC elucidated the marked tendency of He to form platelets in ***, our findings established a correlation between the calculated indentation hardness and the geometry of He defects, consistent with experimental results from nanoindentation. These results significantly contribute to ongoing efforts to design SiC materials with heightened radiation tolerance. © 2024, The Authors. All rights reserved.