0.58 mΩs·cm2/523 v GaN Vertical Schottky Barrier Diode with 15.6 kA/cm2Surge Current Enabled by Laser Lift-Off/ Annealing and N-Ion Implantation

作     者：Qi, Wei Zhou, Feng Ma, Teng Xu, Weizong Zhou, Dong Ren, Fangfang Chen, Dunjun Zhang, Rong Zheng, Youdou Lu, Hai 

作者机构：Nanjing University School of Electronic Science and Engineering Nanjing210093 China China Electronic Product Reliability and Environmental Testing Research Institute Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou511370 China 

出 版 物：《IEEE Electron Device Letters》 (IEEE Electron Device Lett)

年 卷 期：2024年第45卷第6期

页      面：964-967页

核心收录：

学科分类：0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 0806[工学-冶金工程] 08[工学] 0803[工学-光学工程] 

基　　金：This work was supported in part by the National Key Research and Development Program of China under Grant 2022YFB3604300 in part by Jiangsu Provincial Key Research and Development Program under Grant BE202307-4, Grant BE2020004-3, and Grant BK20232045 and in part by the National Natural Science Foundation of China under Grant 62304102, Grant 62374084, Grant 61921005, Grant 62004099, Grant U2141241, and Grant U21A20496 

主　　题：Anodes 

摘      要：Achieving high-performance fully-vertical GaN devices on low-cost and large-scale foreign substrates are highly attractive for the development of device technology. In this work, by performing pulsed laser lift-off and laser annealing techniques, high-performance fully-vertical GaN Schottky barrier diodes (SBDs) with superior N-face ohmic contact characteristics are demonstrated. The resulting device exhibits low specific contact resistivity of 3.51×10-5Ω · cm2 and differential specific on-resistance of 0.58 mΩ· cm2, as well as intact anode Schottky contact. In particular, this device demonstrates robust electrothermal robustness, such as the largest surge current density of 15.6 kA/cm2 to date. Moreover, by implementing N-implanted termination, the breakdown voltage of the device is remarkably enhanced from 240 to 523 V, which is competitive with the state-of-the-art quasi-vertical SBDs. These results reveal the notable potential of pulsed laser lift-off/annealing combined with N-implanted termination for realizing fully-vertical devices. © 1980-2012 IEEE.